Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
855 2006 Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO T Koida, SF Chichibu, A Uedono, A Tsukazaki, M Kawasaki, T Sota, ...
Applied Physics Letters 82 (4), 532-534, 2003
288 2003 Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation … SF Chichibu, A Uedono, T Onuma, T Sota, BA Haskell, SP DenBaars, ...
Applied Physics Letters 86 (2), 2005
178 2005 The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ...
Journal of applied physics 123 (16), 2018
156 2018 Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects SF Chichibu, T Onuma, M Kubota, A Uedono, T Sota, A Tsukazaki, ...
Journal of applied physics 99 (9), 2006
133 2006 Defects in ZnO thin films grown on A Uedono, T Koida, A Tsukazaki, M Kawasaki, ZQ Chen, SF Chichibu, ...
Journal of Applied Physics 93 (5), 2481-2485, 2003
128 2003 Radiative and nonradiative processes in strain-free T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, ...
Journal of applied physics 95 (5), 2495-2504, 2004
121 2004 Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams A Uedono, SF Chichibu, ZQ Chen, M Sumiya, R Suzuki, T Ohdaira, ...
Journal of Applied Physics 90 (1), 181-186, 2001
117 2001 Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0. 6Ga0. 4N films grown on AlN templates by … SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ...
Journal of Applied Physics 113 (21), 2013
114 2013 Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates M Oshima, T Tanimura, Z Liu, S Toyoda, H Kamada, K Ikeda, ...
Applied Physics Letters 95, 2009
97 * 2009 Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO SF Chichibu, A Uedono, A Tsukazaki, T Onuma, M Zamfirescu, A Ohtomo, ...
Semiconductor science and technology 20 (4), S67, 2005
97 2005 Effect of La doping on the lattice defects and photoluminescence properties of CuO LV Devi, T Selvalakshmi, S Sellaiyan, A Uedono, K Sivaji, S Sankar
Journal of Alloys and Compounds 709, 496-504, 2017
94 2017 Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles LV Devi, S Sellaiyan, T Selvalakshmi, HJ Zhang, A Uedono, K Sivaji, ...
Advanced Powder Technology 28 (11), 3026-3038, 2017
89 2017 Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ...
Applied Physics Express 10 (6), 061002, 2017
89 2017 Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy T Koyama, M Sugawara, T Hoshi, A Uedono, JF Kaeding, R Sharma, ...
Applied physics letters 90 (24), 2007
88 2007 Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation A Uedono, S Ishibashi, S Keller, C Moe, P Cantu, TM Katona, DS Kamber, ...
Journal of Applied Physics 105 (5), 2009
87 2009 Study of oxygen vacancies in A Uedono, K Shimayama, M Kiyohara, ZQ Chen, K Yamabe
Journal of applied physics 92 (5), 2697-2702, 2002
87 2002 Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator N Oshima, R Suzuki, T Ohdaira, A Kinomura, T Narumi, A Uedono, ...
Journal of Applied Physics 103 (9), 2008
85 2008 Time-resolved photoluminescence, positron annihilation, and Al0. 23Ga0. 77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN … SF Chichibu, K Hazu, Y Ishikawa, M Tashiro, H Namita, S Nagao, K Fujito, ...
Journal of Applied Physics 111 (10), 2012
81 2012 Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy SF Chichibu, A Setoguchi, A Uedono, K Yoshimura, M Sumiya
Applied Physics Letters 78 (1), 28-30, 2001
78 2001 
Selvakumar SellaiyanUniversity of TsukubaVerifisert e-postadresse på u.tsukuba.ac.jp