| Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy BE Umirzakov, DA Tashmukhamedova, EU Boltaev, AA Dzhurakhalov Materials Science and Engineering: B 101 (1-3), 124-127, 2003 | 42 | 2003 |
| Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation SB Donaev, F Djurabekova, DA Tashmukhamedova, BE Umirzakov Physica status solidi (c) 12 (1‐2), 89-93, 2015 | 37 | 2015 |
| Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation BE Umirzakov, DA Tashmukhamedova, DM Muradkabilov, KK Boltaev Technical Physics 58, 841-844, 2013 | 33 | 2013 |
| On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light YS Ergashov, DA Tashmukhamedova, BE Umirzakov Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques …, 2017 | 32 | 2017 |
| Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing BE Umirzakov, TS Pugacheva, AT Tashatov, DA Tashmukhamedova Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 31 | 2000 |
| Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation YS Ergashov, DA Tashmukhamedova, E Rabbimov Journal of surface investigation. X-ray, synchrotron and neutron techniques …, 2015 | 24 | 2015 |
| СОСТАВ И ЭЛЕКТРОННЫЕ СВОЙСТВА НАНОРАЗМЕРНЫХ ФАЗ И НАНОПЛЕНОК СИЛИЦИДОВ МЕТАЛЛОВ, СОЗДАННЫХ МЕТОДОМ ИОННОЙ ИМПЛАНТАЦИИ В СОЧЕТАНИИ С ОТЖИГОМ ХХ Болтаев, ДА Ташмухамедова, БЕ Умирзаков ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ, 24, 2014 | 23 | 2014 |
| Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods BE Umirzakov, DA Tashmukhamedova, MK Ruzibaeva, AK Tashatov, ... Technical physics 58, 1383-1386, 2013 | 21 | 2013 |
| Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation BE Umirzakov, DA Tashmukhamedova, KK Kurbanov Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2011 | 21 | 2011 |
| Emission and optical properties of SiO2/Si thin films DA Tashmukhamedova, MB Yusupjanova Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2016 | 20 | 2016 |
| Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment BE Umirzakov, DA Tashmukhamedova, MK Ruzibaeva, FG Djurabekova, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 20 | 2014 |
| Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing KK Boltaev, DA Tashmukhamedova, BE Umirzakov Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2014 | 18 | 2014 |
| Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation SB Donaev, BE Umirzakov, DA Tashmukhamedova Technical Physics 60, 1563-1566, 2015 | 17 | 2015 |
| Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films DM Muradkabilov, DA Tashmukhamedova, BE Umirzakov Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques …, 2013 | 17 | 2013 |
| ФОРМИРОВАНИЕ НАНОРАЗМЕРНЫХ СИЛИЦИДНЫХ ФАЗ В ЭПИТАКСИАЛЬНЫХ ПЛЕНКАХ КРЕМНИЯ И ИЗУЧЕНИЕ ИХ ФИЗИКО-ХИМИЧЕСКИХ СВОЙСТВ ДА Ташмухамедова, БЕ Умирзаков, Б Эломон ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ, 101 - 104, 2003 | 17 | 2003 |
| ПРИМЕНЕНИЕ НИЗКОЭНЕРГЕТИЧЕСКОЙ ИОННОЙ ИМПЛАНТАЦИИ ДЛЯ СОЗДАНИЯ НАНОКОНТАКТОВ НА ПОВЕРХНОСТИ УЛЬТРАТОНКИХ ПОЛУПРОВОДНИКОВЫХ ПЛЕНОК ДМ Мурадкабилов, ДА Ташмухамедова, БЕ Умирзаков ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ, 58-58, 2013 | 16 | 2013 |
| Исследование структуры и свойств гетероструктурных нанопленок, созданных методами эпитаксии и ионной имплантации БЕ Умирзаков, ДА Ташмухамедова, МК Рузибаева, ТА Каршиевич, ... Журнал технической физики 83 (9), 146 - 149, 2013 | 16 | 2013 |
| Электронная спектроскопия наноструктур, созданных в поверхностных слоях Si, GaAs и CaF2 методом низкоэнергетической ионной имплантации БЕ Умирзаков, ДА Ташмухамедова, ДМ Мурадкабилов, ХХ Болтаев Журнал технической физики 83 (6), 66 - 70, 2013 | 15 | 2013 |
| Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment MB Yusupjanova, DA Tashmukhamedova, BE Umirzakov Technical Physics 61, 628-630, 2016 | 13 | 2016 |
| Наноматериалы и перспективы их применения БЕ Умирзаков, МТ Нормурадов, ДА Ташмухамедова, АК Ташатов | 13 | 2008 |
Khurshid Kh.Boltaev (ORCID 0000-00...Tashkent state technical university named after Islam KarimovVerifisert e-postadresse på tdtu.uz