| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science, 2018 | 305 | 2018 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature Materials, 2018 | 248 | 2018 |
| Vertical full-colour micro-LEDs via 2D materials-based layer transfer J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ... Nature 614 (7946), 81-87, 2023 | 158 | 2023 |
| Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy X Li, S Sundaram, YE Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ... Crystal Growth and Design, 2016 | 137 | 2016 |
| Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014 | 126 | 2014 |
| Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN T Ayari, S Sundaram, X Li, YE Gmili, PL Voss, JP Salvestrini, ... Applied Physics letters 108, 171106, 2016 | 89 | 2016 |
| Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems YHCBASSSVAPVJPSA Ougazzaden Sensors 16 (3), 273, 2016 | 86 | 2016 |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ... Journal of crystal growth 370, 57-62, 2013 | 70 | 2013 |
| Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ... Scientific reports 7 (1), 15212, 2017 | 68 | 2017 |
| Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013 | 62 | 2013 |
| Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions JH Kang, H Shin, KS Kim, MK Song, D Lee, Y Meng, C Choi, JM Suh, ... Nature materials 22 (12), 1470-1477, 2023 | 56 | 2023 |
| Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ... Scientific reports 7 (1), 786, 2017 | 53 | 2017 |
| BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015 | 51 | 2015 |
| Experimental study and device design of NO, NO2, and NH3 gas detection for a wide dynamic and large temperature range using Pt/AlGaN/GaN HEMT C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, YE Gmili, ... IEEE Sensors, 2016 | 50 | 2016 |
| MOVPE grown periodic AlN/BAlN heterostructure with high boron content X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ... Journal of Crystal Growth 414, 119-122, 2015 | 49 | 2015 |
| AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015 | 46 | 2015 |
| Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery CE Munson, Q Gaimard, K Merghem, S Sundaram, DJ Rogers, ... Journal of Physics D: Applied Physics 51 (3), 035101, 2017 | 43 | 2017 |
| Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors C Bishop, JP Salvestrini, Y Halfaya, S Sundaram, Y El Gmili, L Pradere, ... Applied Physics Letters 106 (24), 2015 | 39 | 2015 |
| Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ... Nanotechnology 23 (45), 455707, 2012 | 34 | 2012 |
| Improving InGaN heterojunction solar cells efficiency using a semi bulk absorber M Arif, W Elhuni, J Streque, S Sundaram, S Belahsene, YE Gmili, X li, ... Solar Energy Materials and Solar Cells, 2017 | 33 | 2017 |
OugazzadenGeorgia Institute of TechnologyVerifisert e-postadresse på georgiatech-metz.fr