Artikler med mandater om offentlig tilgang - Daniele GarbinLes mer
Ikke tilgjengelige noe sted: 3
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, G Donadio, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
Mandater: Research Foundation (Flanders)
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
F Buscemi, E Piccinini, L Vandelli, F Nardi, A Padovani, B Kaczer, ...
IEEE Transactions on Electron Devices 70 (4), 1808-1814, 2023
Mandater: European Commission
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
T Ravsher, SH Sharifi, A Fantini, H Hody, T Witters, D Garbin, R Degraeve, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
Mandater: Research Foundation (Flanders)
Tilgjengelige et eller annet sted: 17
Spiking neural networks based on OxRAM synapses for real-time unsupervised spike sorting
T Werner, E Vianello, O Bichler, D Garbin, D Cattaert, B Yvert, B De Salvo, ...
Frontiers in neuroscience 10, 474, 2016
Mandater: European Commission
Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ...
physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020
Mandater: European Commission
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019
Mandater: UK Engineering and Physical Sciences Research Council
Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
IEEE Electron Device Letters 40 (8), 1269-1272, 2019
Mandater: UK Engineering and Physical Sciences Research Council
Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
2019 Symposium on VLSI Technology, T238-T239, 2019
Mandater: UK Engineering and Physical Sciences Research Council
GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator
Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ...
IEEE Electron Device Letters 41 (2), 228-231, 2019
Mandater: UK Engineering and Physical Sciences Research Council
Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
T Ravsher, R Degraeve, D Garbin, A Fantini, S Clima, GL Donadio, ...
2021 IEEE International Electron Devices Meeting (IEDM), 28.4. 1-28.4. 4, 2021
Mandater: Research Foundation (Flanders)
Self-rectifying memory cell based on SiGeAsSe ovonic threshold switch
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, GL Donadio, ...
IEEE Transactions on Electron Devices 70 (5), 2276-2281, 2023
Mandater: Research Foundation (Flanders)
Cycling induced metastable degradation in GeSe Ovonic threshold switching selector
Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ...
IEEE Electron Device Letters 42 (10), 1448-1451, 2021
Mandater: National Natural Science Foundation of China, UK Engineering and Physical …
Ovonic threshold switch chalcogenides: connecting the first-principles electronic structure to selector device parameters
S Clima, T Ravsher, D Garbin, R Degraeve, A Fantini, R Delhougne, ...
ACS Applied Electronic Materials 5 (1), 461-469, 2022
Mandater: Research Foundation (Flanders)
Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching
X Zhou, Z Hu, Z Chai, W Zhang, S Clima, R Degraeve, JF Zhang, A Fantini, ...
IEEE Electron Device Letters 43 (7), 1061-1064, 2022
Mandater: National Natural Science Foundation of China, UK Engineering and Physical …
Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, GL Donadio, ...
physica status solidi (RRL)–Rapid Research Letters 17 (8), 2200417, 2023
Mandater: Research Foundation (Flanders)
Device‐to‐materials pathway for electron traps detection in amorphous GeSe‐based selectors
A Slassi, LS Medondjio, A Padovani, F Tavanti, X He, S Clima, D Garbin, ...
Advanced Electronic Materials 9 (4), 2201224, 2023
Mandater: European Commission, Government of Spain
In silico screening for As/Se-free ovonic threshold switching materials
S Clima, D Matsubayashi, T Ravsher, D Garbin, R Delhougne, GS Kar, ...
npj Computational Materials 9 (1), 96, 2023
Mandater: Research Foundation (Flanders)
Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Z Chai, P Freitas, WD Zhang, F Hatem, R Degraeve, S Clima, JF Zhang, ...
IEEE Electron Device Letters 41 (10), 1496-1499, 2020
Mandater: UK Engineering and Physical Sciences Research Council
RTN in GexSe1-x OTS selector devices
Z Chai, W Zhang, R Degraeve, JF Zhang, J Marsland, A Fantini, D Garbin, ...
Microelectronic Engineering 215, 110990, 2019
Mandater: UK Engineering and Physical Sciences Research Council
New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Z Hu, W Zhang, R Degraeve, D Garbin, Z Chai, N Saxena, P Freitas, ...
IEEE Transactions on Electron Devices 70 (2), 812-818, 2022
Mandater: UK Engineering and Physical Sciences Research Council
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