| Photoelectric properties of silicon-based solar cells implanted with rare earth elements EBE Iliev Kh. M., Nasriddinov SS, Toshev AR, Zoirova ME Conference. Russia, Vladivostok, 204-208, 2006 | 11* | 2006 |
| Impurity photovoltaic effect in silicon with multicharge Mn clusters MK Bakhadyrkhanov, KM Iliev, SA Tachilin, SS Nasriddinov, ... Applied Solar Energy 44, 132-134, 2008 | 8 | 2008 |
| О диффузии атомов германия в кремний БА Абдурахманов, МК Бахадырханов, ХМ Илиев, СС Насриддинов ДАН РУз, 18-20, 2008 | 8 | 2008 |
| On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon AS Rysbaev, AK Tashatov, SX Dzhuraev, ZB Khuzhaniyazov, G Arzikulov, ... Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2011 | 7 | 2011 |
| ОСОБЕННОСТИ ТЕРМИЧЕСКИХ СВОЙСТВ СИЛЬНОКОМПЕНСИРОВАННОГО Si< img src="/get_item_image. asp? id= 12951780&img= FO_1_1. gif" align= absmiddle border= 0> B, Mn МК Бахадырханов, СА Валиев, СС Насриддинов, У Эгамов Неорганические материалы 45 (11), 1291-1293, 2009 | 7 | 2009 |
| Investigation of temperature sensors based on Si< P, Ni> SS Nasriddinov Journal of nano-and electronic physics 7 (3), 03037-5, 2015 | 6 | 2015 |
| Источники погрешности измерительных преобразователей на основе полупроводников датчиков и разработка методов их компенсации БЭ Эгамбердиев, СС Насриддинов, НФ Зикриллаев Химическая технология контроль и управления, 30-35, 2012 | 6 | 2012 |
| Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method S Utamuradova, S Nasriddinov, S Ismoilov International Journal 8 (7), 2020 | 5 | 2020 |
| TECHNOLOGICAL FEATURES OF OBTAINING STRENGTH SENSITIVE POLYCRYSTALLINE FILMS Bi2-XSbXTe3 M Onarkulov, S Nasriddinov, S Yuldashev, L Yunusaliev Euroasian Journal of Semiconductors Science and Engineering 2 (3), 27, 2020 | 5 | 2020 |
| Sensitive thermosensors on the basis of highly compensated silicon MK Bakhadyrkhanov, SA Valiev, SS Nasriddinov, SA Tachilin Surface Engineering and Applied Electrochemistry 43, 505-507, 2007 | 5 | 2007 |
| О НОВЫХ ДВУМЕРНЫХ СТРУКТУРАХ, ОБРАЗУЮЩИХСЯ НА ПОВЕРХНОСТИ Si (111) И Si (100) ПРИ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ СИЛИЦИДА КОБАЛЬТА АС Рысбаев, АК Ташатов, ШХ Джураев, ЖБ Хужаниязов, Г Арзикулов, ... Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 72-72, 2011 | 4 | 2011 |
| Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions MT Normuradov, AK Tashatov, AS Rysbaev, ZB Khuzhaniyazov, ... Journal of Communications Technology and Electronics 52, 898-900, 2007 | 4 | 2007 |
| A Study of Complex Defect Formation in Silicon Doped With Nickel SS Nasriddinov, DM Esbergenov Russian Physics Journal 65 (9), 1559-1563, 2023 | 3 | 2023 |
| Исследование термодатчиков на основе Si< P, Ni СС Насриддинов Сумський державний університет, 2015 | 3 | 2015 |
| The effect of implantation of low-energy ions on the density of states of valence electrons in silicon AS Rysbaev, MT Normuradov, YU YULDASHEV, SS Nasriddinov Journal of communications technology & electronics 42 (2), 220-222, 1997 | 2 | 1997 |
| Study of the critical angle of channeling of active metal ions through thin aluminum films ZA Isakhanov, ZE Muhtarov, PM Yorkulov, BE Umirzakov, SS Nasriddinov | 1 | 2021 |
| Изучение критического угла каналирования ионов активных металлов через тонкие пленки алюминия ЗА Исаханов, БЕ Умирзаков, СС Насриддинов, ЗЭ Мухтаров, ... Письма в Журнал технической физики 47 (23), 12-14, 2021 | 1 | 2021 |
| DIGITAL MODELLING OF OPTIMIZATION PROCESS OF ANTIREFLECTION COVERING FOR SILICON SOLAR CELLS SS Nasriddinov, MA Mujdinova Euroasian Journal of Semiconductors Science and Engineering 3 (1), 11, 2021 | 1 | 2021 |
| INFLUENCE OF TECHNOLOGICAL MODES OF ION IMPLANTATION AND FOLLOWING ANNEALING ON THE PROFILE OF DISTRIBUTION OF IMPLANTED ATOMS IN Si (111) AND Si (100) S Nasriddinov, Z Tursunmetova, J Khuzhaniyozov, S Abraeva Euroasian Journal of Semiconductors Science and Engineering 2 (6), 12, 2020 | 1 | 2020 |
| Criteria for obtaining compensated nickel silicon SS Nasriddinov, S Ismailov, D Esbergenov, M Mannonov Euroasian Journal of Semiconductors Science and Engineering 2 (4), 10, 2020 | 1 | 2020 |
Bahrom EgamberdievResearch Institute of Physics of Semiconductors and Microelectronics at the National University ofVerifisert e-postadresse på tdtu.uz