| A wafer‐scale nanoporous 2D active pixel image sensor matrix with high uniformity, high sensitivity, and rapid switching H Park, A Sen, M Kaniselvan, AA AlMutairi, A Bala, LP Lee, Y Yoon, S Kim Advanced Materials 35 (14), 2210715, 2023 | 32 | 2023 |
| Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect M Naqi, M Kaniselvan, S Choo, G Han, S Kang, J Kim, Y Yoon, S Kim Advanced Electronic Materials 6 (4), 1901256, 2020 | 20 | 2020 |
| An atomistic model of field-induced resistive switching in valence change memory M Kaniselvan, M Luisier, M Mladenovic ACS nano 17 (9), 8281-8292, 2023 | 14 | 2023 |
| Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks C Weilenmann, AN Ziogas, T Zellweger, K Portner, M Mladenović, ... Nature Communications 15 (1), 6898, 2024 | 12 | 2024 |
| An atomistic modelling framework for valence change memory cells M Kaniselvan, M Luisier, M Mladenović Solid-State Electronics, 108506, 2022 | 7 | 2022 |
| Photoresponse of MoSe2 Transistors: A Fully Numerical Quantum Transport Simulation Study G Han, M Kaniselvan, Y Yoon ACS Applied Electronic Materials 2 (11), 3765-3772, 2020 | 7 | 2020 |
| Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors M Kaniselvan, Y Yoon Applied Physics Letters 119 (7), 2021 | 6 | 2021 |
| A comparative study on 2D materials with native high-κ oxides for sub-10 nm transistors M Sritharan, RKA Bennett, M Kaniselvan, Y Yoon Materials Today Electronics 8, 100096, 2024 | 1 | 2024 |
| Mitigating Tunneling Leakage in Ultrascaled HfS2 pMOS Devices With Uniaxial Strain M Kaniselvan, M Sritharan, Y Yoon IEEE Electron Device Letters 43 (7), 1133-1136, 2022 | 1 | 2022 |
| Learning the Hamiltonian Matrix of Large Atomic Systems CH Xia, M Kaniselvan, AN Ziogas, M Mladenović, R Mahjoub, A Maeder, ... arXiv preprint arXiv:2501.19110, 2025 | | 2025 |
| Learning the Hamiltonian Matrix of Large Atomic Systems C Hao Xia, M Kaniselvan, A Nikolaos Ziogas, M Mladenović, R Mahjoub, ... arXiv e-prints, arXiv: 2501.19110, 2025 | | 2025 |
| Publisher Correction: Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks C Weilenmann, AN Ziogas, T Zellweger, K Portner, M Mladenović, ... Nature Communications 15, 10672, 2024 | | 2024 |
| Nanoscale Device Modeling Beyond the Ballistic Limit of Transport and Fixed Geometries M Luisier, J Backman, J Cao, L Deuschle, M Kaniselvan, Y Lee, A Maeder, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Accelerated Atomistic Kinetic Monte Carlo Simulations of Resistive Memory Arrays M Kaniselvan, A Maeder, M Mladenović, M Luisier, AN Ziogas SC24: International Conference for High Performance Computing, Networking …, 2024 | | 2024 |
| Insights behind multi-level conductance transitions in HfOx memristors M Kaniselvan, M Mladenović, J Clarysse, K Portner, M Luisier 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| (Invited) Advanced Modeling of Nanoscale Devices M Luisier, J Aeschlimann, J Backman, J Cao, M Kaniselvan, Y Lee, ... Electrochemical Society Meeting Abstracts 243, 1849-1849, 2023 | | 2023 |
| Dataset for the paper" An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory" M Luisier, M Mladenović, M Kaniselvan ETH Zurich, 2023 | | 2023 |
| Engineering the Performance of 2D Transition Metal Dichalcogenide Nanotransistors through Quantum Transport Simulations M Kaniselvan University of Waterloo, 2021 | | 2021 |
| Learning the Hamiltonian of Disordered Materials with Equivariant Graph Networks CH Xia, M Kaniselvan, AN Ziogas, M Mladenovic, A Maeder, M Luisier | | |
| Termination-Dependence of Resistive Switching in SrTiO3-based Valence Change Memory M Mladenovic, M Kaniselvan, C Weilenmann, A Emboras, M Luisier | | |
Mathieu LuisierETH ZurichVerifisert e-postadresse på iis.ee.ethz.ch