A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
648 2016 Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ...
2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010
329 2010 Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm S Barraud, M Berthome, R Coquand, M Cassé, T Ernst, MP Samson, ...
IEEE Electron Device Letters 33 (9), 1225-1227, 2012
263 2012 Probing the limits of gate-based charge sensing MF Gonzalez-Zalba, S Barraud, AJ Ferguson, AC Betz
Nature communications 6 (1), 1-8, 2015
194 2015 Performance of omega-shaped-gate silicon nanowire MOSFET with diameter down to 8 nm S Barraud, R Coquand, M Casse, M Koyama, JM Hartmann, ...
IEEE Electron Device Letters 33 (11), 1526-1528, 2012
170 2012 Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
150 2019 Electrical Spin Driving by A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
146 2018 Performance and design considerations for gate-all-around stacked-NanoWires FETs S Barraud, V Lapras, B Previtali, MP Samson, J Lacord, S Martinie, ...
2017 IEEE international electron devices meeting (IEDM), 29.2. 1-29.2. 4, 2017
146 2017 Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ...
IEEE Electron Device Letters 40 (5), 784-787, 2019
132 2019 Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ...
2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016
123 2016 Revisited parameter extraction methodology for electrical characterization of junctionless transistors DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 90, 86-93, 2013
122 2013 Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
121 2014 Electrical Control of g -Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
115 2016 Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
111 2018 Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width R Coquand, M Casse, S Barraud, D Cooper, V Maffini-Alvaro, ...
IEEE transactions on electron devices 60 (2), 727-732, 2012
104 2012 7-levels-stacked nanosheet GAA transistors for high performance computing S Barraud, B Previtali, C Vizioz, JM Hartmann, J Sturm, J Lassarre, ...
2020 IEEE symposium on VLSI technology, 1-2, 2020
92 2020 Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features TP Ernst, F Andrieu, O Weber, JM Hartmann, C Dupre, O Faynot, ...
ECS Transactions 3 (7), 947, 2006
90 2006 3D Sequential Integration: Application-driven technological achievements and guidelines P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ...
2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017
89 2017 Low-temperature electrical characterization of junctionless transistors DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 80, 135-141, 2013
89 2013 Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width R Coquand, S Barraud, M Cassé, P Leroux, C Vizioz, C Comboroure, ...
Solid-State Electronics 88, 32-36, 2013
87 2013 