| Klein-tunneling transistor with ballistic graphene Q Wilmart, S Berrada, VH Nguyen, G Feve, JM Berroir, P Dollfus, ... Graphene 2014, 2014 | 64 | 2014 |
| Graphene nanomesh transistor with high on/off ratio and good saturation behavior S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ... Applied Physics Letters 103 (18), 2013 | 60 | 2013 |
| Pseudosaturation and negative differential conductance in graphene field-effect transistors A Alarcon, VH Nguyen, S Berrada, D Querlioz, J Saint-Martin, A Bournel, ... IEEE transactions on electron devices 60 (3), 985-991, 2013 | 36 | 2013 |
| Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ... Journal of Computational Electronics 19 (2), https://doi.org/10.1007/s10825 …, 2020 | 34 | 2020 |
| Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ... Materials 12 (1), 124, 2019 | 24 | 2019 |
| NESS: new flexible nano-electronic simulation software S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 21 | 2018 |
| Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ... Applied Sciences 9 (9), 1895, 2019 | 20 | 2019 |
| Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ... IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019 | 17 | 2019 |
| Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ... IEEE Electron Device Letters 39 (9), 1473-1476, 2018 | 14 | 2018 |
| Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ... IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018 | 14 | 2018 |
| A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ... 2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017 | 12 | 2017 |
| The impact of dopant diffusion on random dopant fluctuation in Si nanowire FETs: A quantum transport study J Lee, S Berrada, H Carrillo-Nunez, C Medina-Bailon, F Adamu-Lema, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 9 | 2018 |
| Atomistic-to circuit-level modeling of doped SWCNT for on-chip interconnects J Liang, J Lee, S Berrada, VP Georgiev, R Pandey, R Chen, A Asenov, ... IEEE Transactions on Nanotechnology 17 (6), 1084-1088, 2018 | 9 | 2018 |
| Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors M Bescond, H Carrillo-Nuñez, S Berrada, N Cavassilas, M Lannoo Solid-State Electronics 122, 1-7, 2016 | 9 | 2016 |
| Surface Roughness Scattering in NEGF using self-energy formulation O Badami, S Berrada, H Carrillo-Nunez, C Medina-Bailon, V Georgiev, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 8 | 2019 |
| Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs J Lee, O Badami, H Carrillo-Nuñez, S Berrada, C Medina-Bailon, T Dutta, ... Micromachines 9 (12), 643, 2018 | 8 | 2018 |
| Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors C Medina-Bailon, T Sadi, M Nedjalkov, J Lee, S Berrada, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 8 | 2018 |
| Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions S Berrada, M Bescond, N Cavassilas, L Raymond, M Lannoo Applied Physics Letters 107 (15), 2015 | 8 | 2015 |
| Impact of the effective mass on the mobility in Si nanowire transistors C Medina-Bailon, T Sadi, M Nedjalkov, J Lee, S Berrada, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 7 | 2018 |
| Characterization and closed-form modeling of edge/top/hybrid metal-2D semiconductor contacts A Pal, V Mishra, J Weber, K Krishnaswamy, K Ghosh, AV Penumatcha, ... 2022 International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2022 | 5 | 2022 |
Vihar P. GeorgievProfessor of Nanoelectronics at University of GlasgowVerifisert e-postadresse på glasgow.ac.uk