Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
436 2003 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
336 2006 Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 2010
278 2010 Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ...
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
189 2003 Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks RJ Carter, E Cartier, A Kerber, L Pantisano, T Schram, S De Gendt, ...
Applied physics letters 83 (3), 533-535, 2003
158 2003 Record ION /IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
151 2008 On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ...
Electrochemical and Solid-State Letters 13 (6), G54, 2010
150 2010 P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
143 2009 Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness E Simoen, A Mercha, L Pantisano, C Claeys, E Young
IEEE transactions on electron devices 51 (5), 780-784, 2004
134 2004 On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices J Westlinder, T Schram, L Pantisano, E Cartier, A Kerber, GS Lujan, ...
IEEE Electron Device Letters 24 (9), 550-552, 2003
127 2003 Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/gate stacks with TiN electrodes A Kerber, E Cartier, R Degraeve, PJ Roussel, L Pantisano, T Kauerauf, ...
IEEE Transactions on Electron Devices 50 (5), 1261-1269, 2003
104 2003 Reliability screening of high-k dielectrics based on voltage ramp stress A Kerber, L Pantisano, A Veloso, G Groeseneken, M Kerber
Microelectronics reliability 47 (4-5), 513-517, 2007
93 2007 Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
90 2012 Estimation of fixed charge densities in hafnium-silicate gate dielectrics VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
90 2006 Effect of bulk trap density on HfO/sub 2/reliability and yield R Degraeve, A Kerber, P Roussell, E Cartier, T Kauerauf, L Pantisano, ...
IEEE International Electron Devices Meeting 2003, 38.5. 1-38.5. 4, 2003
90 2003 A study of relaxation current in high-/spl kappa/dielectric stacks Z Xu, L Pantisano, A Kerber, R Degraeve, E Cartier, S De Gendt, M Heyns, ...
IEEE Transactions on Electron Devices 51 (3), 402-408, 2004
72 2004 Impact of EOT scaling down to 0.85 nm on 70nm Ge-pFETs technology with STI J Mitard, C Shea, B DeJaeger, A Pristera, G Wang, M Houssa, G Eneman, ...
2009 Symposium on VLSI Technology, 82-83, 2009
69 2009 Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
68 2008 Performance comparison of sub 1 nm sputtered TiN/HfO~ 2 nMOS and pMOSFETs W Tsai, LA Ragnarsson, L Pantisano, PJ Chen, B Onsia, T Schram, ...
International Electron Devices Meeting, 311-314, 2003
68 * 2003 Towards understanding degradation and breakdown of SiO2 /high-k stacks T Kauerauf, R Degraeve, E Cartier, B Govoreanu, P Blomme, B Kaczer, ...
Digest. International Electron Devices Meeting,, 521-524, 2002
67 2002 