| Two-terminal spin–orbit torque magnetoresistive random access memory N Sato, F Xue, RM White, C Bi, SX Wang Nature Electronics 1 (9), 508-511, 2018 | 179 | 2018 |
| Domain wall based spin-Hall nano-oscillators N Sato, K Schultheiss, L Körber, N Puwenberg, T Mühl, AA Awad, ... Physical review letters 123 (5), 057204, 2019 | 53 | 2019 |
| Experimental and theoretical investigation of the precise transduction mechanism in giant magnetoresistive biosensors JR Lee, N Sato, DJB Bechstein, SJ Osterfeld, J Wang, AW Gani, DA Hall, ... Scientific reports 6 (1), 18692, 2016 | 46 | 2016 |
| Exchange-biased anisotropic magnetoresistive field sensor Y Guo, Y Ouyang, N Sato, CC Ooi, SX Wang IEEE Sensors Journal 17 (11), 3309-3315, 2017 | 31 | 2017 |
| Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy N Sato, RM White, SX Wang Applied Physics Letters 108 (15), 2016 | 31 | 2016 |
| Skin effect suppression for Cu/CoZrNb multilayered inductor N Sato, Y Endo, M Yamaguchi Journal of Applied Physics 111 (7), 2012 | 31 | 2012 |
| Stacked ferroelectric non-planar capacitors in a memory bit-cell RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A Mathuriya, ... US Patent 11,423,967, 2022 | 28 | 2022 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 27 | 2020 |
| Dual hydrogen barrier layer for memory devices N Sato, N Mukherjee, M Manfrini, T Gosavi, RK Dokania, SJ Rathi, ... US Patent 11,869,928, 2024 | 23 | 2024 |
| A Study of Economical Incentives for Voltage Profile Control Method in Future Distribution Network T Tsuji, N Sato, T Hashiguchi, T Goda, S Tange, T Nomura IEEJ Transactions on Power and Energy 129 (6), 745-755, 2009 | 22 | 2009 |
| High blocking temperature spin orbit torque electrode T Gosavi, S Manipatruni, K Oguz, I Young, K O'brien, G Allen, N Sato US Patent 11,251,365, 2022 | 20 | 2022 |
| Large voltage control of magnetic anisotropy in CoFeB/MgO/OX structures at room temperature F Xue, N Sato, C Bi, J Hu, J He, SX Wang APL Materials 7 (10), 2019 | 20 | 2019 |
| Spin orbit torque (SOT) memory devices and their methods of fabrication N Sato, A Smith, T Gosavi, S Manipatruni, K Oguz, K O'brien, T Rahman, ... US Patent 11,367,749, 2022 | 19 | 2022 |
| Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy N Sato, KP O'Brien, K Millard, B Doyle, K Oguz Journal of Applied Physics 119 (9), 2016 | 19 | 2016 |
| Time refraction of spin waves K Schultheiss, N Sato, P Matthies, L Körber, K Wagner, T Hula, O Gladii, ... Physical review letters 126 (13), 137201, 2021 | 18 | 2021 |
| A Japanese scale to assess anxiety severity: development and psychometric evaluation C Mimura, M Nishioka, N Sato, R Hasegawa, R Horikoshi, Y Watanabe The International Journal of Psychiatry in Medicine 41 (1), 29-45, 2011 | 17 | 2011 |
| Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory T Gosavi, S Manipatruni, K Oguz, N Sato, K O'brien, B Buford, C Wiegand, ... US Patent 11,476,412, 2022 | 16 | 2022 |
| Electrically Tunable Integrated Thin‐Film Magnetoelectric Resonators A El‐Ghazaly, JT Evans, N Sato, N Montross, H Ohldag, RM White, ... Advanced Materials Technologies 2 (8), 1700062, 2017 | 13 | 2017 |
| Skin effect suppression in multilayer thin-film spiral inductor taking advantage of negative permeability of magnetic film beyond FMR frequency M Yamaguchi, N Sato, Y Endo The 40th European Microwave Conference, 1182-1185, 2010 | 13 | 2010 |
| Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication K O'brien, N Sato, K Oguz, M Doczy, C Kuo US Patent 11,227,644, 2022 | 12 | 2022 |
