Luminescence from stacking faults in gallium nitride R Liu, A Bell, FA Ponce, CQ Chen, JW Yang, MA Khan
Applied Physics Letters 86 (2), 2005
421 2005 Slip systems and misfit dislocations in InGaN epilayers S Srinivasan, L Geng, R Liu, FA Ponce, Y Narukawa, S Tanaka
Applied Physics Letters 83 (25), 5187-5189, 2003
264 2003 Microstructure and electronic properties of InGaN alloys FA Ponce, S Srinivasan, A Bell, L Geng, R Liu, M Stevens, J Cai, H Omiya, ...
physica status solidi (b) 240 (2), 273-284, 2003
213 2003 Atomic arrangement at the AlN/Si (111) interface R Liu, FA Ponce, A Dadgar, A Krost
Applied Physics Letters 83 (5), 860-862, 2003
185 2003 Prismatic stacking faults in epitaxially laterally overgrown GaN J Mei, S Srinivasan, R Liu, FA Ponce, Y Narukawa, T Mukai
Applied Physics Letters 88 (14), 2006
98 2006 Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire A Bell, R Liu, FA Ponce, H Amano, I Akasaki, D Cherns
Applied physics letters 82 (3), 349-351, 2003
93 2003 Generation of misfit dislocations by basal-plane slip in InGaN∕ GaN heterostructures R Liu, J Mei, S Srinivasan, FA Ponce, H Omiya, Y Narukawa, T Mukai
Applied physics letters 89 (20), 2006
88 2006 Fine structure of AlN∕ AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering WH Sun, JP Zhang, JW Yang, HP Maruska, MA Khan, R Liu, FA Ponce
Applied Physics Letters 87 (21), 2005
72 2005 Misfit dislocation generation in InGaN epilayers on free-standing GaN R Liu, J Mei, S Srinivasan, H Omiya, FA Ponce, D Cherns, Y Narukawa, ...
Japanese journal of applied physics 45 (6L), L549, 2006
60 2006 Atomic arrangement at the R Liu, A Bell, FA Ponce, S Kamiyama, H Amano, I Akasaki
Applied physics letters 81 (17), 3182-3184, 2002
41 2002 Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Y Tomida, S Nitta, S Kamiyama, H Amano, I Akasaki, S Otani, H Kinoshita, ...
Applied surface science 216 (1-4), 502-507, 2003
37 2003 Defect and stress control of AlGaN for fabrication of high performance UV light emitters H Amano, A Miyazaki, K Iida, T Kawashima, M Iwaya, S Kamiyama, ...
physica status solidi (a) 201 (12), 2679-2685, 2004
35 2004 Observation of coreless edge and mixed dislocations in Mg-doped D Cherns, YQ Wang, R Liu, FA Ponce
Applied physics letters 81 (24), 4541-4543, 2002
30 2002 A comparison of Rutherford Backscattering spectroscopy and X‐ray diffraction to determine the composition of thick InGaN epilayers S Srinivasan, R Liu, F Bertram, FA Ponce, S Tanaka, H Omiya, ...
physica status solidi (b) 228 (1), 41-44, 2001
29 2001 Basal-plane slip in InGaN∕ GaN heterostructures in the presence of threading dislocations J Mei, R Liu, FA Ponce, H Omiya, T Mukai
Applied physics letters 90 (17), 2007
26 2007 Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth A Bell, R Liu, UK Parasuraman, FA Ponce, S Kamiyama, H Amano, ...
Applied physics letters 85 (16), 3417-3419, 2004
25 2004 The generation of misfit dislocations in facet-controlled growth of AlGaN∕ GaN films D Cherns, SL Sahonta, R Liu, FA Ponce, H Amano, I Akasaki
Applied physics letters 85 (21), 4923-4925, 2004
23 2004 Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE M Tsuda, K Watanabe, S Kamiyama, H Amano, I Akasaki, R Liu, A Bell, ...
Applied surface science 216 (1-4), 585-589, 2003
21 2003 Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence F Bertram, S Srinivasan, R Liu, L Geng, FA Ponce, T Riemann, J Christen, ...
Materials Science and Engineering: B 93 (1-3), 19-23, 2002
13 2002 Thick crack‐free AlGaN films deposited by facet‐controlled epitaxial lateral overgrowth R Liu, A Bell, FA Ponce, H Amano, I Akasaki, D Cherns
physica status solidi (c), 2136-2140, 2003
7 2003 