| A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 340 | 2009 |
| Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal/High-K Gate stack E Bernard, T Ernst, B Guillaumot, N Vulliet, V Barral, V Maffini-Alvaro, ... 2008 Symposium on VLSI Technology, 16-17, 2008 | 260 | 2008 |
| Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond F Andrieu, O Weber, J Mazurier, O Thomas, JP Noel, ... 2010 Symposium on VLSI Technology, 57-58, 2010 | 116 | 2010 |
| Growth and structural properties of step-graded, high Sn content GeSn layers on Ge J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ... Semiconductor Science and Technology 32 (9), 094006, 2017 | 100 | 2017 |
| GeSn heterostructure micro-disk laser operating at 230 K QM Thai, N Pauc, J Aubin, M Bertrand, J Chrétien, V Delaye, A Chelnokov, ... Optics express 26 (25), 32500-32508, 2018 | 99 | 2018 |
| Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack T Ernst, C Dupre, C Isheden, E Bernard, R Ritzenthaler, V Maffini-Alvaro, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 97 | 2006 |
| Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures P Calka, E Martinez, V Delaye, D Lafond, G Audoit, D Mariolle, ... Nanotechnology 24 (8), 085706, 2013 | 95 | 2013 |
| First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers L Brunet, P Batude, C Fenouillet-Béranger, P Besombes, L Hortemel, ... 2016 IEEE symposium on VLSI technology, 1-2, 2016 | 89 | 2016 |
| Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory G Navarro, M Coué, A Kiouseloglou, P Noé, F Fillot, V Delaye, A Persico, ... 2013 IEEE International Electron Devices Meeting, 21.5. 1-21.5. 4, 2013 | 71 | 2013 |
| Properties of electrodeposited CuSCN 2D layers and nanowires influenced by their mixed domain structure D Aldakov, C Chappaz-Gillot, R Salazar, V Delaye, KA Welsby, V Ivanova, ... The Journal of Physical Chemistry C 118 (29), 16095-16103, 2014 | 70 | 2014 |
| Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires K Tachi, M Casse, D Jang, C Dupre, A Hubert, N Vulliet, V Maffini-Alvaro, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 61 | 2009 |
| Hydrogen annealing of arrays of planar and vertically stacked Si nanowires E Dornel, T Ernst, JC Barbé, JM Hartmann, V Delaye, F Aussenac, ... Applied Physics Letters 91 (23), 2007 | 60 | 2007 |
| Investigation of forming, SET, and data retention of conductive-bridge random-access memory for stack optimization J Guy, G Molas, P Blaise, M Bernard, A Roule, G Le Carval, V Delaye, ... IEEE Transactions on Electron Devices 62 (11), 3482-3489, 2015 | 58 | 2015 |
| Sb-doped GeS2as performance and reliability booster in Conductive Bridge RAM E Vianello, G Molas, F Longnos, P Blaise, E Souchier, C Cagli, G Palma, ... 2012 International Electron Devices Meeting, 31.5. 1-31.5. 4, 2012 | 57 | 2012 |
| Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique B Vincent, JF Damlencourt, V Delaye, R Gassilloud, L Clavelier, Y Morand Applied physics letters 90 (7), 2007 | 56 | 2007 |
| Evolution of Cu microstructure and resistivity during thermal treatment of damascene line: Influence of line width and temperature V Carreau, S Maîtrejean, M Verdier, Y Bréchet, A Roule, A Toffoli, ... Microelectronic Engineering 84 (11), 2723-2728, 2007 | 54 | 2007 |
| Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera MP Vigouroux, V Delaye, N Bernier, R Cipro, D Lafond, G Audoit, T Baron, ... Applied Physics Letters 105 (19), 2014 | 51 | 2014 |
| Polymer solar cells with electrodeposited CuSCN nanowires as new efficient hole transporting layer C Chappaz-Gillot, S Berson, R Salazar, B Lechêne, D Aldakov, V Delaye, ... Solar energy materials and solar cells 120, 163-167, 2014 | 51 | 2014 |
| Probing deeper by hard x-ray photoelectron spectroscopy P Risterucci, O Renault, E Martinez, B Detlefs, V Delaye, J Zegenhagen, ... Applied Physics Letters 104 (5), 2014 | 46 | 2014 |
| Comparative scalability of PVD and CVD TiN on HfO2 as a metal gate stack for FDSOI cMOSFETs down to 25nm gate length and width F Andrieu, O Faynot, X Garros, D Lafond, C Buj-Dufournet, L Tosti, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 43 | 2006 |
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