Sulfur vacancies in monolayer MoS2 and its electrical contacts D Liu, Y Guo, L Fang, J Robertson
Applied Physics Letters 103 (18), 2013
454 2013 Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts Y Guo, D Liu, J Robertson
Applied Physics Letters 106 (17), 2015
196 2015 Superlubricity of a graphene/MoS 2 heterostructure: a combined experimental and DFT study L Wang, X Zhou, T Ma, D Liu, L Gao, X Li, J Zhang, Y Hu, H Wang, Y Dai, ...
Nanoscale 9 (30), 10846-10853, 2017
176 2017 Solvatochromic effect on the photoluminescence of MoS₂ monolayers. N Mao, Y Chen, D Liu, J Zhang, L Xie
Small (Weinheim an der Bergstrasse, Germany) 9 (8), 1312-1315, 2013
175 2013 3D behavior of Schottky barriers of 2D transition-metal dichalcogenides Y Guo, D Liu, J Robertson
ACS applied materials & interfaces 7 (46), 25709-25715, 2015
173 2015 Oxygen vacancies in high-k oxides K Tse, D Liu, K Xiong, J Robertson
Microelectronic Engineering 84 (9-10), 2028-2031, 2007
118 2007 Ultrasensitive SERS detection of rhodamine 6G and p-nitrophenol based on electrochemically roughened nano-Au film J Wang, C Qiu, X Mu, H Pang, X Chen, D Liu
Talanta 210, 120631, 2020
92 2020 Au-Modified Monolayer MoS2 Sensor for DNA Detection K Jin, L Xie, Y Tian, D Liu
The Journal of Physical Chemistry C 120 (20), 11204-11209, 2016
88 2016 Magnetic proximity effect in graphene coupled to a YF Wu, HD Song, L Zhang, X Yang, Z Ren, D Liu, HC Wu, J Wu, JG Li, ...
Physical Review B 95 (19), 195426, 2017
84 2017 Direct Visualization of Exciton Transport in Defective Few‐Layer WS2 by Ultrafast Microscopy H Liu, C Wang, Z Zuo, D Liu, J Luo
Advanced Materials 32 (2), 1906540, 2020
75 2020 Electrochemical functionalization of 316 stainless steel with polyaniline-graphene oxide: Corrosion resistance study C Qiu, D Liu, K Jin, L Fang, G Xie, J Robertson
Materials Chemistry and Physics 198, 90-98, 2017
73 2017 Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition D Liu, J Robertson
Applied Physics Letters 94 (4), 2009
67 2009 Thickness dependent friction on few-layer MoS2, WS2, and WSe2 L Fang, DM Liu, Y Guo, ZM Liao, JB Luo, SZ Wen
Nanotechnology 28 (24), 245703, 2017
66 2017 Lateral graphene p–n junctions formed by the graphene/MoS 2 hybrid interface J Meng, HD Song, CZ Li, Y Jin, L Tang, D Liu, ZM Liao, F Xiu, DP Yu
Nanoscale 7 (27), 11611-11619, 2015
65 2015 Raman spectroscopy as a potential diagnostic tool to analyse biochemical alterations in lung cancer Q Zheng, J Li, L Yang, B Zheng, J Wang, N Lv, J Luo, FL Martin, D Liu, ...
Analyst 145 (2), 385-392, 2020
52 2020 Neutral and defect-induced exciton annihilation in defective monolayer WS 2 H Liu, C Wang, D Liu, J Luo
Nanoscale 11 (16), 7913-7920, 2019
51 2019 Oxygen vacancy levels and interfaces of Al2O3 D Liu, J Robertson
Microelectronic Engineering 86 (7-9), 1668-1671, 2009
49 2009 Step-by-step fracture of two-layer stacked graphene membranes QY Lin, YH Zeng, D Liu, GY Jing, ZM Liao, D Yu
ACS nano 8 (10), 10246-10251, 2014
47 2014 First-principles calculations of the electronic structure and defects of Al2O3 D Liu, Y Guo, L Lin, J Robertson
Journal of Applied Physics 114 (8), 2013
46 2013 A new opportunity for the emerging tellurium semiconductor: making resistive switching devices Y Yang, M Xu, S Jia, B Wang, L Xu, X Wang, H Liu, Y Liu, Y Guo, L Wang, ...
Nature Communications 12 (1), 6081, 2021
45 2021 
John RobertsonProfessor of Electronics, University of CambridgeVerifisert e-postadresse på eng.cam.ac.uk