| Suppression of Mg propagation into subsequent layers grown by MOCVD A Agarwal, M Tahhan, T Mates, S Keller, U Mishra Journal of Applied Physics 121 (2), 025106, 2017 | 31 | 2017 |
| Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ... Japanese Journal of Applied Physics 55 (2), 021501, 2016 | 31 | 2016 |
| Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors MB Tahhan, JA Logan, MT Hardy, MG Ancona, B Schultz, B Appleton, ... IEEE Transactions on Electron Devices 69 (3), 962-967, 2022 | 29 | 2022 |
| N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates E Ahmadi, F Wu, H Li, SW Kaun, M Tahhan, K Hestroffer, S Keller, ... Semiconductor Science and Technology 30 (5), 055012, 2015 | 29 | 2015 |
| Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (3 …, 2016 | 28 | 2016 |
| High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ... Semiconductor Science and Technology 31 (6), 065008, 2016 | 26 | 2016 |
| In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ... Applied Physics Letters 104 (26), 263511, 2014 | 18 | 2014 |
| Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices D Bisi, SH Chan, M Tahhan, OS Koksaldi, S Keller, M Meneghini, ... Power Semiconductor Devices and ICs (ISPSD), 2016 28th International …, 2016 | 11 | 2016 |
| ScAlN-GaN Transistor Technology for Millimeter-wave Ultra-high Power and Efficient MMICs EM Chumbes, J Logan, B Schultz, M DeJarld, M Tahhan, N Kolias, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 295-297, 2022 | 7 | 2022 |
| Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN SH Chan, D Bisi, X Liu, R Yeluri, M Tahhan, S Keller, SP DenBaars, ... Journal of Applied Physics 122 (17), 174101, 2017 | 7 | 2017 |
| Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition SH Chan, D Bisi, M Tahhan, C Gupta, SP DenBaars, S Keller, E Zanoni, ... Applied Physics Express 11 (4), 041002, 2018 | 5 | 2018 |
| Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET MB Tahhan UC Santa Barbara, 2017 | 3 | 2017 |
| Double continuous graded back barrier group iii-nitride high electron mobility heterostructure MB Tahhan, JA Logan US Patent App. 18/054,990, 2024 | | 2024 |
| T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM MT Dejarld, EM Chumbes, MB Tahhan, DP Hunley US Patent App. 17/822,937, 2024 | | 2024 |
| RARE-EARTH III-NITRIDE N-POLAR HEMT JA Logan, BD Schultz, MB Tahhan US Patent App. 17/666,671, 2022 | | 2022 |
