| Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ... Applied Physics Express 10 (4), 041102, 2017 | 286 | 2017 |
| MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck APL Materials 7 (2), 2019 | 266 | 2019 |
| Demonstration of β-(AlxGa1− x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, X Zheng, T Mates, Y Oshima, UK Mishra, ... Applied Physics Express 10 (7), 071101, 2017 | 247 | 2017 |
| N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ... IEEE Electron Device Letters 39 (7), 1014-1017, 2018 | 92 | 2018 |
| Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels C Gupta, SH Chan, C Lund, A Agarwal, OS Koksaldi, J Liu, Y Enatsu, ... Applied Physics Express 9 (12), 121001, 2016 | 58 | 2016 |
| AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment A Krishna, A Raj, N Hatui, O Koksaldi, R Jang, S Keller, UK Mishra physica status solidi (a) 217 (7), 1900692, 2020 | 32 | 2020 |
| Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ... Japanese Journal of Applied Physics 55 (2), 021501, 2016 | 31 | 2016 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ... Semiconductor Science and Technology 34 (4), 045009, 2019 | 25 | 2019 |
| Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy K Hestroffer, C Lund, O Koksaldi, H Li, G Schmidt, M Trippel, P Veit, ... Journal of Crystal Growth 465, 55-59, 2017 | 18 | 2017 |
| Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN R Yeluri, X Liu, M Guidry, OS Koksaldi, S Lal, J Kim, J Lu, S Keller, ... Applied Physics Letters 105 (22), 2014 | 17 | 2014 |
| 1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) C Gupta, A Agarwal, SH Chan, OS Koksaldi, S Keller, UK Mishra 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 14 | 2017 |
| Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices D Bisi, SH Chan, M Tahhan, OS Koksaldi, S Keller, M Meneghini, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 11 | 2016 |
| Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane SH Chan, S Keller, OS Koksaldi, C Gupta, SP DenBaars, UK Mishra Journal of Crystal Growth 464, 54-58, 2017 | 9 | 2017 |
| Maskless regrowth of GaN for trenched devices by MOCVD A Agarwal, O Koksaldi, C Gupta, S Keller, UK Mishra Applied Physics Letters 111 (23), 2017 | 7 | 2017 |
| High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications OS Koksaldi, B Romanczyk, J Haller, M Guidry, H Li, S Keller, UK Mishra Semiconductor Science and Technology 35 (12), 124004, 2020 | 4 | 2020 |
| N-Polar GaN HEMTs for High Voltage Switching Applications OS Koksaldi University of California, Santa Barbara, 2018 | 1 | 2018 |
| Development of p-type AlGaN/GaN Superlattice Field Effect Transistor A Krishna, A Raj, N Hatui, OS Koksaldi, B Romanczyk, S Keller, ... International Workshop on Nitride Semiconductors (IWN), Kanazawa, Japan, 2018 | | 2018 |
| N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient mm-Wave Power Amplifiers SS Pasayat, E Ahmadi, B Romanczyk, OS Koksaldi, A Agarwal, M Guidry, ... International Symposium on Compound Semiconductors (ISCS), Boston, MA, USA, 2018 | | 2018 |
| N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias OS Koksaldi, J Haller, H Li, N Hatui, B Romanczyk, M Guidry, S Wienecke, ... International Symposium on Compound Semiconductors (ISCS), Boston, MA, USA, 2018 | | 2018 |
| Dynamic ON-Resistance Characteristics of N-polar GaN HEMTs Exhibiting Breakdown Voltage Over 1400 V OS Koksaldi, J Haller, H Li, B Romanczyk, S Wienecke, M Guidry, S Keller, ... International Conference on Nitride Semiconductors (ICNS), Strasbourg, France, 2017 | | 2017 |
Umesh MishraUCSBGeverifieerd e-mailadres voor ece.ucsb.edu
