| In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ... IEEE Electron Device Letters 38 (3), 353-355, 2017 | 173 | 2017 |
| The physics of recombinations in III-nitride emitters A David, NG Young, C Lund, MD Craven ECS Journal of Solid State Science and Technology 9 (1), 016021, 2019 | 97 | 2019 |
| Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ... IEEE Electron Device Letters 39 (5), 711-714, 2018 | 68 | 2018 |
| Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells K Hestroffer, F Wu, H Li, C Lund, S Keller, JS Speck, UK Mishra Semiconductor Science and Technology 30 (10), 105015, 2015 | 65 | 2015 |
| Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels C Gupta, SH Chan, C Lund, A Agarwal, OS Koksaldi, J Liu, Y Enatsu, ... Applied Physics Express 9 (12), 121001, 2016 | 58 | 2016 |
| Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography B Bonef, M Catalano, C Lund, SP Denbaars, S Nakamura, UK Mishra, ... Applied Physics Letters 110 (14), 2017 | 40 | 2017 |
| Thermal droop in high-quality InGaN LEDs A David, NG Young, C Lund, MD Craven Applied Physics Letters 115 (22), 2019 | 36 | 2019 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Growth of high purity N-polar (In, Ga) N films C Lund, S Nakamura, SP DenBaars, UK Mishra, S Keller Journal of Crystal Growth 464, 127-131, 2017 | 29 | 2017 |
| Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra Journal of Vacuum Science & Technology A 34 (3), 2016 | 28 | 2016 |
| Compensation between radiative and Auger recombinations in III-nitrides: the scaling law of separated-wavefunction recombinations A David, NG Young, C Lund, MD Craven Applied Physics Letters 115 (19), 2019 | 21 | 2019 |
| Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN C Lund, M Catalano, L Wang, C Wurm, T Mates, M Kim, S Nakamura, ... Journal of Applied Physics 123 (5), 2018 | 21 | 2018 |
| Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices C Lund, B Romanczyk, M Catalano, Q Wang, W Li, D DiGiovanni, MJ Kim, ... Journal of Applied Physics 121 (18), 2017 | 21 | 2017 |
| Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades K Hestroffer, C Lund, H Li, S Keller, JS Speck, UK Mishra physica status solidi (b) 253 (4), 626-629, 2016 | 21 | 2016 |
| Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates C Lund, K Hestroffer, N Hatui, S Nakamura, SP DenBaars, UK Mishra, ... Applied Physics Express 10 (11), 111001, 2017 | 19 | 2017 |
| Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy K Hestroffer, C Lund, O Koksaldi, H Li, G Schmidt, M Trippel, P Veit, ... Journal of Crystal Growth 465, 55-59, 2017 | 18 | 2017 |
| InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ... Semiconductor Science and Technology 30 (10), 105020, 2015 | 17 | 2015 |
| Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition CE Reilly, C Lund, S Nakamura, UK Mishra, SP DenBaars, S Keller Applied Physics Letters 114 (24), 2019 | 16 | 2019 |
| Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors W Li, L Cao, C Lund, S Keller, P Fay physica status solidi (a) 213 (4), 905-908, 2016 | 15 | 2016 |
| Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD C Lund, A Agarwal, B Romanczyk, T Mates, S Nakamura, SP DenBaars, ... Semiconductor Science and Technology 33 (9), 095014, 2018 | 14 | 2018 |
Stacia KellerUniversity of California Santa BarbaraGeverifieerd e-mailadres voor ece.ucsb.edu
