| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 538 | 2011 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 381 | 2010 |
| The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE international reliability physics symposium, 16-25, 2010 | 358 | 2010 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 310 | 2009 |
| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 310 | 2008 |
| A two-stage model for negative bias temperature instability T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel 2009 IEEE international reliability physics symposium, 33-44, 2009 | 296 | 2009 |
| Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ... IEEE Transactions on Electron Devices 49 (3), 500-506, 2002 | 239 | 2002 |
| Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 229 | 2005 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 220 | 2011 |
| Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction R Degraeve, B Kaczer, G Groeseneken Microelectronics Reliability 39 (10), 1445-1460, 1999 | 220 | 1999 |
| The universality of NBTI relaxation and its implications for modeling and characterization T Grasser, W Gos, V Sverdlov, B Kaczer 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 208 | 2007 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 189 | 2018 |
| Emerging yield and reliability challenges in nanometer CMOS technologies G Gielen, P De Wit, E Maricau, J Loeckx, J Martín-Martínez, B Kaczer, ... Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008 | 185 | 2008 |
| Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors T Grasser, H Reisinger, PJ Wagner, B Kaczer Physical Review B—Condensed Matter and Materials Physics 82 (24), 245318, 2010 | 180 | 2010 |
| Atomistic approach to variability of bias-temperature instability in circuit simulations B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ... 2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011 | 177 | 2011 |
| AC NBTI studied in the 1 Hz--2 GHz range on dedicated on-chip CMOS circuits R Fernandez, B Kaczer, A Nackaerts, S Demuynck, R Rodriguez, M Nafria, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 168 | 2006 |
| Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability T Grasser, B Kaczer, P Hehenberger, W Gos, R O'Connor, H Reisinger, ... 2007 IEEE International Electron Devices Meeting, 801-804, 2007 | 154 | 2007 |
| Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 151 | 2009 |
| High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 150 | 2006 |
| Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI B Kaczer, PJ Roussel, T Grasser, G Groeseneken IEEE Electron Device Letters 31 (5), 411-413, 2010 | 144 | 2010 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEGeverifieerd e-mailadres voor iue.tuwien.ac.at