| In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ... IEEE Electron Device Letters 38 (3), 353-355, 2017 | 171 | 2017 |
| Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars, ... Applied Physics Express 14 (1), 011004, 2020 | 148 | 2020 |
| OG-FET: An in-situ Oxide, GaN interlayer based vertical trench MOSFET C Gupta, SH Chan, Y Enatsu, A Agarwal, S Keller, UK Mishra IEEE ELECTRON DEVICE LETTERS 37 (12), 1601-1604, 2016 | 83 | 2016 |
| Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ... Electron Devices Meeting (IEDM), 2017 IEEE International, 9.4. 1-9.4. 4, 2017 | 72 | 2017 |
| Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ... IEEE Electron Device Letters 39 (5), 711, 2018 | 68 | 2018 |
| High breakdown voltage p–n diodes on GaN on sapphire by MOCVD C Gupta, Y Enatsu, G Gupta, S Keller, UK Mishra physica status solidi (a) 213 (4), 878-882, 2016 | 68 | 2016 |
| Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates SS Pasayat, R Ley, C Gupta, MS Wong, C Lynsky, Y Wang, MJ Gordon, ... Applied Physics Letters 117 (6), 2020 | 65 | 2020 |
| Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels C Gupta, C Silvia, L Cory, A Anchal, K Onur S., J Liu, Y Enatsu, S Keller, ... Applied Physics Express 9 (12), 121001-1-3, 2016 | 58 | 2016 |
| Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates SS Pasayat, C Gupta, MS Wong, Y Wang, S Nakamura, SP Denbaars, ... Applied Physics Letters 116 (11), 2020 | 57 | 2020 |
| Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN SS Pasayat, C Gupta, D Acker-James, DA Cohen, SP DenBaars, ... Semiconductor Science and Technology 34 (11), 115020, 2019 | 50 | 2019 |
| Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra IEEE Electron Device Letters 41 (2), 220-223, 2020 | 49 | 2020 |
| First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra IEEE Electron Device Letters 38 (11), 1575-1578, 2017 | 49 | 2017 |
| Compliant micron-sized patterned InGaN pseudo-substrates utilizing porous GaN SS Pasayat, C Gupta, Y Wang, SP DenBaars, S Nakamura, S Keller, ... Materials 13 (1), 213, 2020 | 36 | 2020 |
| Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ... IEEE Electron Device Letters 39 (7), 1030-1033, 2018 | 35 | 2018 |
| Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage S Chowdhury, J Kim, C Gupta, S Keller, SH Chan, UK Mishra US Patent 10,312,361, 2019 | 33 | 2019 |
| Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ... Japanese Journal of Applied Physics 55 (2), 021501, 2016 | 31 | 2016 |
| An improved methodology for extracting interface state density at Si3N4/GaN W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra Applied Physics Letters 116 (2), 2020 | 29 | 2020 |
| High-field transport in a graphene nanolayer VK Arora, MLP Tan, C Gupta Journal of Applied Physics 112 (11), 2012 | 29 | 2012 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ... Semiconductor Science and Technology 34 (4), 045009, 2019 | 25 | 2019 |
| Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ... Applied Physics Letters 117 (6), 2020 | 21 | 2020 |
Stacia KellerUniversity of California Santa BarbaraGeverifieerd e-mailadres voor ece.ucsb.edu
