| Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements CH Swartz, RP Tompkins, NC Giles, TH Myers, H Lu, WJ Schaff, ... Journal of Crystal Growth 269 (1), 29-34, 2004 | 108 | 2004 |
| Design and characterization of GaN pin diodes for betavoltaic devices MR Khan, JR Smith, RP Tompkins, S Kelley, M Litz, J Russo, ... Solid-State Electronics 136, 24-29, 2017 | 42 | 2017 |
| Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe CH Swartz, RP Tompkins, NC Giles, TH Myers, DD Edwall, J Ellsworth, ... Journal of electronic materials 33, 728-736, 2004 | 37 | 2004 |
| Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe D Edwall, E Piquette, J Ellsworth, J Arias, CH Swartz, L Bai, RP Tompkins, ... Journal of electronic materials 33, 752-756, 2004 | 37 | 2004 |
| IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates RP Tompkins, MR Khan, R Green, KA Jones, JH Leach Journal of Materials Science: Materials in Electronics 27, 6108-6114, 2016 | 29 | 2016 |
| DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN PB Shah, RH Dedhia, RP Tompkins, EA Viveiros, KA Jones Solid-state electronics 78, 121-126, 2012 | 28 | 2012 |
| Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures I Mahaboob, K Hogan, SW Novak, F Shahedipour-Sandvik, RP Tompkins, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 26 | 2018 |
| Photoluminescence of ZnTe and ZnTe: Cr grown by molecular-beam epitaxy M Luo, BL VanMil, RP Tompkins, TH Myers, NC Giles Journal of applied physics 97 (1), 2005 | 25 | 2005 |
| The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Journal of Materials Research 26 (23), 2895-2900, 2011 | 21 | 2011 |
| Selective area epitaxial growth of stretchable geometry AlGaN-GaN heterostructures I Mahaboob, J Marini, K Hogan, E Rocco, RP Tompkins, N Lazarus, ... Journal of Electronic Materials 47, 6625-6634, 2018 | 18 | 2018 |
| HVPE GaN for high power electronic Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Solid-state electronics 79, 238-243, 2013 | 18 | 2013 |
| Electrical properties of AlGaN/GaN HEMTs in stretchable geometries RP Tompkins, I Mahaboob, F Shahedipour-Sandvik, N Lazarus Solid-State Electronics 136, 36-42, 2017 | 16 | 2017 |
| Nano-indentation used to study pyramidal slip in GaN single crystals E Krimsky, KA Jones, RP Tompkins, P Rotella, J Ligda, BE Schuster Journal of Applied Physics 123 (6), 2018 | 15 | 2018 |
| GaN power schottky diodes with drift layers grown on four substrates RP Tompkins, JR Smith, KW Kirchner, KA Jones, JH Leach, K Udwary, ... Journal of electronic materials 43, 850-856, 2014 | 15 | 2014 |
| Mechanical analysis of stretchable AlGaN/GaN high electron mobility transistors RP Tompkins, I Mahaboob, S Shahedipour-Sandvik, N Lazarus ECS Transactions 72 (5), 89, 2016 | 12 | 2016 |
| GaN photonic crystal-based, enhanced fluorescence biomolecule detection system JM Dawson, JR Nightingale, RP Tompkins, X Cao, TH Myers, LA Hornak, ... MRS Online Proceedings Library 1040, 1-6, 2007 | 11 | 2007 |
| Luminescence study of ZnTe: Cr epilayers grown by molecular-beam epitaxy M Luo, BL Vanmil, RP Tompkins, Y Cui, T Mounts, UN Roy, A Burger, ... Journal of electronic materials 32, 737-741, 2003 | 11 | 2003 |
| Characterization of multiple carriers in GaN using variable magnetic-field Hall measurements CH Swartz, RP Tompkins, TH Myers, DC Look, JR Sizelove Journal of electronic materials 33, 412-417, 2004 | 10 | 2004 |
| Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy F Shahedipour-Sandvik, J Leathersich, RP Tompkins, P Suvarna, ... Semiconductor science and technology 28 (7), 074002, 2013 | 9 | 2013 |
| Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy CH Swartz, S Chandril, RP Tompkins, NC Giles, TH Myers, DD Edwall, ... Journal of electronic materials 35, 1360-1368, 2006 | 8 | 2006 |