The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
1196 2018 Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
793 2008 Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 2013
487 2013 The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
447 2020 Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
436 2013 GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
397 2021 A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
337 2009 A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni
IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008
332 2008 Power GaN Devices M Meneghini, G Meneghesso, E Zanoni
Cham: Springer International Publishing, 2017
230 2017 Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
212 2008 Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
184 2014 Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ...
IEEE transactions on electron devices 58 (9), 2996-3003, 2011
184 2011 Technology and reliability of normally-off GaN HEMTs with p-type gate M Meneghini, O Hilt, J Wuerfl, G Meneghesso
Energies 10 (2), 153, 2017
175 2017 AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013
174 2013 A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn
Journal of Applied Physics 106 (11), 2009
172 2009 Reliability and parasitic issues in GaN-based power HEMTs: A review G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ...
Semiconductor Science and Technology 31 (9), 093004, 2016
156 2016 Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ...
IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016
154 2016 Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 2012
154 2012 Breakdown mechanisms in AlGaN/GaN HEMTs: an overview G Meneghesso, M Meneghini, E Zanoni
Japanese Journal of Applied Physics 53 (10), 100211, 2014
149 2014 Temperature-Dependent Dynamic M Meneghini, P Vanmeerbeek, R Silvestri, S Dalcanale, A Banerjee, ...
IEEE transactions on electron devices 62 (3), 782-787, 2015
137 2015 