Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars, ...
Applied Physics Express 14 (1), 011004, 2020
148 2020 High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (5), 681-684, 2020
77 2020 Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling M Malakoutian, DE Field, NJ Hines, S Pasayat, S Graham, M Kuball, ...
ACS Applied Materials & Interfaces 13 (50), 60553-60560, 2021
75 2021 Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates SS Pasayat, R Ley, C Gupta, MS Wong, C Lynsky, Y Wang, MJ Gordon, ...
Applied Physics Letters 117 (6), 2020
65 2020 Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates SS Pasayat, C Gupta, MS Wong, Y Wang, S Nakamura, SP Denbaars, ...
Applied Physics Letters 116 (11), 2020
57 2020 Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN SS Pasayat, C Gupta, D Acker-James, D Cohen, SP DenBaars, ...
Semiconductor Science and Technology 34 (11), 2019
50 2019 Compliant micron-sized patterned InGaN pseudo-substrates utilizing porous GaN SS Pasayat, C Gupta, Y Wang, SP DenBaars, S Nakamura, S Keller, ...
Materials 13 (1), 213, 2020
36 2020 First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ...
Semiconductor Science and Technology 34 (4), 045009, 2019
25 2019 Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ...
Applied Physics Letters 117 (6), 2020
21 2020 Vertical GaN and Vertical Ga2 O3 Power Transistors: Status and Challenges C Gupta, SS Pasayat
physica status solidi (a) 219 (7), 2100659, 2022
20 2022 First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain C Gupta, Y Tsukada, B Romanczyk, SS Pasayat, DA James, E Ahmadi, ...
Japanese Journal of Applied Physics 58 (3), 030908, 2019
18 2019 Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐to the Micrometer Scale S Keller, SS Pasayat, C Gupta, SP DenBaars, S Nakamura, UK Mishra
physica status solidi (RRL)–Rapid Research Letters 15 (11), 2100234, 2021
14 2021 Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ...
Applied Surface Science 655, 159615, 2024
13 2024 Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...
Journal of Applied Physics 131 (1), 2022
13 2022 0.86 kV p-Si/(001)-Ga2 O3 heterojunction diode S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ...
IEEE Electron Device Letters, 2024
11 2024 First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel W Li, S Pasayat, M Guidry, B Romanczyk, X Zheng, C Gupta, N Hatui, ...
Semiconductor Science and Technology 35 (7), 075007, 2020
11 2020 Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction J Gong, D Kim, H Jang, F Alema, Q Wang, J Zhou, Y Li, TK Ng, S Qiu, ...
Applied Physics Letters 124 (26), 2024
10 2024 A novel concept using derivative superposition at the device-level to reduce linearity sensitivity to bias in N-polar GaN MISHEMT P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ...
2020 Device Research Conference (DRC), 1-2, 2020
10 2020 Monocrystalline Si/ J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ...
arXiv preprint arXiv:2305.19138, 2023
6 2023 Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices C Gupta, SH Chan, SS Pasayat, S Keller, UK Mishra
Journal of Applied Physics 125 (12), 2019
6 2019 
Chirag GuptaAssistant Professor, UW MadisonGeverifieerd e-mailadres voor wisc.edu
