| Forward Bias Gate Breakdown Mechanism in Enhancement-mode p-GaN gate AlGaN/GaN High-electron-mobility Transistors (HEMTs) TL Wu, D Marcon, S You, N Posthuma, B Bakernoot, S Stoffels, ... Electron Device Letters, IEEE 30 (10), 1001 - 1003, 2015 | 206* | 2015 |
| Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs M Meneghini, I Rossetto, M Ruzzarin, D Bisi, M Van Hove, S Stoffels, ... IEEE Electron Device Letters 37 (4), 2016 | 125 | 2016 |
| Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ... IEEE Transactions on Power Electronics, 5 (29), 2199 - 2207, 2014 | 105 | 2014 |
| Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN / AlGaN / GaN Heterostructures TL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ... IEEE Electron Device Letters, 2017 | 97 | 2017 |
| Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate D Bisi, M Meneghini, M Van Hove, D Marcon, S Stoffels, TL Wu, ... physica status solidi (a) 212 (5), 1122-1129, 2015 | 96 | 2015 |
| Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs D Marcon, G Meneghesso, TL Wu, S Stoffels, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 60 (10), 3132-3141, 2013 | 91 | 2013 |
| High-Performance GaN MOSFET With High-κ LaAlO3/SiO2 Gate Dielectric CY Tsai, TL Wu IEEE Electron Device Letters 33 (1), 35-37, 2011 | 91 | 2011 |
| Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ... Applied Physics Letters 104, 143505-1-143505-4, 2014 | 84 | 2014 |
| Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs TL Wu, J Franco, D Marcon, B De Jaeger, B Bakeroot, S Stoffels, ... IEEE Transaction on Electron Devices, 2016 | 77 | 2016 |
| On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors B Bakeroot, S You, TL Wu, J Hu, M Van Hove, B De Jaeger, K Geens, ... Journal of Applied Physics 116 (13), 2014 | 77 | 2014 |
| Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors TL Wu, D Marcon, B Bakeroot, B De Jaeger, HC Lin, J Franco, S Stoffels, ... Applied Physics Letters 107 (9), 093507-1- 093507-4, 2015 | 74 | 2015 |
| Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, S Stoffels, ... 2015 IEEE International Reliability Physics Symposium, 6C. 4.1-6C. 4.6, 2015 | 69 | 2015 |
| Failure mode for p-GaN gates under forward gate stress with varying Mg concentration S Stoffels, B Bakeroot, TL Wu, D Marcon, NE Posthuma, S Decoutere, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-4.1-4B-4.9, 2017 | 62 | 2017 |
| Comprehensive Investigation of On-State Stress on D-Mode AlGaN/GaN MIS-HEMTs TL Wu, D Marcon, MB Zahid, M Van Hove, S Decoutere, G Groeseneken IEEE International Reliability Physics Symposium (IRPS), 3C.5.1-3C.5.7, 2013 | 61 | 2013 |
| Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate G Meneghesso, M Meneghini, D Bisi, I Rossetto, TL Wu, M Van Hove, ... Microelectronics Reliability 58, 151-157, 2016 | 52 | 2016 |
| Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology D Marcon, M Van Hove, B De Jaeger, N Posthuma, D Wellekens, S You, ... Gallium Nitride Materials and Devices X 9363, 117-128, 2015 | 52 | 2015 |
| Gate stability of GaN-based HEMTs with p-type gate M Meneghini, I Rossetto, V Rizzato, S Stoffels, M Van Hove, N Posthuma, ... Electronics 5 (2), 14, 2016 | 50 | 2016 |
| A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs N Modolo, SW Tang, HJ Jiang, CD Santi, M Meneghini, TL Wu IEEE Transactions on Electron Devices, 2021 | 48 | 2021 |
| Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress M Ruzzarin, M Meneghini, I Rossetto, M Van Hove, S Stoffels, TL Wu, ... IEEE Electron Device Letters 37 (11), 1415 - 1417, 2016 | 46 | 2016 |
| The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, D Lin, S Stoffels, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 46 | 2015 |
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