Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas
Applied Physics Letters 92 (19), 2008
133 2008 Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy E Iliopoulos, TD Moustakas
Applied physics letters 81 (2), 295-297, 2002
128 2002 Broadening of near-band-gap photoluminescence in E Iliopoulos, D Doppalapudi, HM Ng, TD Moustakas
Applied physics letters 73 (3), 375-377, 1998
122 1998 Distributed Bragg reflectors based on AlN/GaN multilayers HM Ng, D Doppalapudi, E Iliopoulos, TD Moustakas
Applied physics letters 74 (7), 1036-1038, 1999
117 1999 Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ...
Journal of applied physics 97 (11), 2005
116 2005 Epitaxial growth of gallium nitride thin films on A -Plane sapphire by molecular beam epitaxy D Doppalapudi, E Iliopoulos, SN Basu, TD Moustakas
journal of applied physics 85 (7), 3582-3589, 1999
92 1999 Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ...
Journal of crystal growth 278 (1-4), 426-430, 2005
84 2005 Chemical ordering in AlGaN alloys grown by molecular beam epitaxy E Iliopoulos, KF Ludwig Jr, TD Moustakas, SNG Chu
Applied Physics Letters 78 (4), 463-465, 2001
81 2001 Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas
Applied physics letters 88 (19), 2006
75 2006 All-dielectric GaN microcavity: Strong coupling and lasing at room temperature KS Daskalakis, PS Eldridge, G Christmann, E Trichas, R Murray, ...
Applied Physics Letters 102 (10), 2013
74 2013 InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
physica status solidi (a) 203 (1), 102-105, 2006
70 2006 Growth and device applications of III-nitrides by MBE TD Moustakas, E Iliopoulos, AV Sampath, HM Ng, D Doppalapudi, ...
Journal of crystal growth 227, 13-20, 2001
70 2001 Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy C Bazioti, E Papadomanolaki, T Kehagias, T Walther, ...
Journal of Applied Physics 118 (15), 2015
67 2015 Bowing of the band gap pressure coefficient in InxGa1− xN alloys G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Munoz, ...
Journal of Applied Physics 103 (3), 2008
64 2008 Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ...
Applied Physics Letters 95 (2), 2009
63 2009 Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas
Applied Physics Letters 86 (13), 2005
59 2005 High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors A Bhattacharyya, S Iyer, E Iliopoulos, AV Sampath, J Cabalu, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
54 2002 Optical properties of InGaN thin films in the entire composition range SA Kazazis, E Papadomanolaki, M Androulidaki, M Kayambaki, ...
Journal of Applied Physics 123 (12), 2018
52 2018 Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys M Androulidaki, NT Pelekanos, K Tsagaraki, E Dimakis, E Iliopoulos, ...
physica status solidi c 3 (6), 1866-1869, 2006
51 2006 Thermal oxidation of n-type ZnN films made by rf-sputtering from a zinc nitride target, and their conversion into p-type films V Kambilafka, P Voulgaropoulou, S Dounis, E Iliopoulos, M Androulidaki, ...
Superlattices and Microstructures 42 (1-6), 55-61, 2007
50 2007 