| TCAD device modelling and simulation of wide bandgap power semiconductors N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018 | 43 | 2018 |
| Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou Semiconductor Science and Technology 32 (10), 104009, 2017 | 30 | 2017 |
| Kathodigos-a novel smart parking system based on wireless sensor network I Samaras, N Evangeliou, A Arvanitopoulos, J Gialelis, S Koubias, A Tzes Intelligent Transportation Systems 1, 140-145, 2013 | 26 | 2013 |
| Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ... 2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017 | 24 | 2017 |
| A fuzzy rule-based and energy-efficient method for estimating the free size of parking places in smart cities by using wireless sensor networks I Samaras, A Arvanitopoulos, N Evangeliou, J Gialelis, S Koubias Proceedings of the 2014 IEEE Emerging Technology and Factory Automation …, 2014 | 19 | 2014 |
| On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ... IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019 | 18 | 2019 |
| Energy efficient indoor localization utilizing BT 4.0 strapdown inertial navigation system A Arvanitopoulos, J Gialelis, S Koubias Proceedings of the 2014 IEEE Emerging Technology and Factory Automation …, 2014 | 11 | 2014 |
| A comprehensive comparison of the static performance of commercial GaN-on-Si devices S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 9 | 2017 |
| A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes AE Arvanitopoulos, M Antoniou, MR Jennings, S Perkins, KN Gyftakis, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 54-65, 2019 | 8 | 2019 |
| 3C-SiC-on-Si MOSFETs: overcoming material technology limitations A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ... IEEE Transactions on Industry Applications 58 (1), 565-575, 2021 | 5 | 2021 |
| Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, KN Gyftakis, ... 2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019 | 5 | 2019 |
| > 10kV 4H-SiC n-IGBTs for elevated temperature environments S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ... | 5 | 2018 |
| Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes A Arvanitopoulos, F Li, MR Jennings, S Perkins, K Gyftakis, P Mawby, ... IEEE Transactions on Industry Applications 57 (5), 5252-5263, 2021 | 4 | 2021 |
| Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes A Arvanitopoulos, S Perkins, KN Gyftakis, N Lophitis, MR Jennings, ... 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 4 | 2018 |
| Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes A Anastasios, L Fan, J M. R., P Samuel, G K. N., A Marina, M Phil, ... IEEE Energy Conversion Congress and Exposition (ECCE), 2019 | 3 | 2019 |
| Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ... 2019 IEEE 12th International Symposium on Diagnostics for Electrical …, 2019 | 2 | 2019 |
| On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 2 | 2018 |
| 3C-SiC material parameters for accurate TCAD modeling and simulation A Arvanitopoulos, S Perkins, KN Gyftakis, M Antoniou, N Lophitis The 10th International Conference on Silicon Epitaxy and Heterostructures …, 2017 | 2 | 2017 |
| On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating … N Lophitis, A Arvanitopoulos, MR Jennings, PA Mawby, M Antoniou 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Development of vertical GaN FETs for bi-directional battery charging A Arvanitopoulos, P Igic, R Harper, J Evans, M Elwin, S Faramehr 2021 IEEE 12th Energy Conversion Congress & Exposition-Asia (ECCE-Asia), 1-6, 2021 | 1 | 2021 |
Neophytos LophitisAssistant Professor at University of NottinghamGeverifieerd e-mailadres voor Nottingham.ac.uk
