| Fundamental mechanisms responsible for the temperature coefficient of resonant frequency in microwave dielectric ceramics S Zhang, H Sahin, E Torun, F Peeters, D Martien, T DaPron, N Dilley, ... Journal of the American Ceramic Society 100 (4), 1508-1516, 2017 | 25 | 2017 |
| Main Source of Microwave Loss in Transition‐Metal‐Doped Ba(Zn1/3Ta2/3)O3 and Ba(Zn1/3Nb2/3)O3 at Cryogenic Temperatures S Zhang, A Devonport, N Newman Journal of the American Ceramic Society 98 (4), 1188-1194, 2015 | 22 | 2015 |
| In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching R Zhang, R Garcia, R Strittmatter, Y Zhang, S Zhang IEEE Transactions on Power Electronics 38 (9), 10589-10594, 2023 | 21 | 2023 |
| Fabrication of highly spin-polarized Co2FeAl0. 5Si0. 5 thin-films M Vahidi, JA Gifford, SK Zhang, S Krishnamurthy, ZG Yu, L Yu, M Huang, ... APL Materials 2 (4), 2014 | 19 | 2014 |
| EPC eGaN device reliability testing: Phase 12 A Pozo, S Zhang, G Stecklein, R Garcia, J Glaser, Z Tang, R Strittmatter Efficient Power Conversion, 2021 | 12 | 2021 |
| Intrinsic failure mechanisms in GaN-on-Si power transistors A Lidow, R Strittmatter, S Zhang, A Pozo IEEE Power Electronics Magazine 7 (4), 28-35, 2020 | 10 | 2020 |
| GaN reliability and lifetime projections: Phase 14 A Pozo, S Zhang, G Stecklein, R Garcia, J Glaser, Z Tang, R Strittmatter Efficient Power Conversion (EPC), 2022 | 7 | 2022 |
| Better Resolution of High-Spin Cobalt Hyperfine at Low Frequency: Co-Doped Ba(Zn1/3Ta2/3)O3 as a Model Complex WE Antholine, S Zhang, J Gonzales, N Newman International journal of molecular sciences 19 (11), 3532, 2018 | 7 | 2018 |
| In-situ electron paramagnetic resonance studies of paramagnetic point defects in superconducting microwave resonators S Zhang, C Kopas, B Wagner, D Queen, N Newman Applied Physics Letters 109 (12), 2016 | 6 | 2016 |
| Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures CJ Kopas, J Gonzales, S Zhang, DR Queen, B Wagner, MD Robinson, ... AIP Advances 11 (9), 2021 | 5 | 2021 |
| EPC eGaN FETs reliability testing: Phase 10 A Pozo, S Zhang, R Strittmatter Reliability Rep.: Phase Ten Testing, Efficient Power Conversion Corporation …, 2019 | 5 | 2019 |
| Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters S Zhang, S Gajare, R Garcia, S Huang, A Espinoza, A Gorgerino, ... Power Electronic Devices and Components 6, 100051, 2023 | 4 | 2023 |
| Radiation results for modern GaN-on-Si power transistors M Zafrani, J Brandt, R Strittmatter, B Sun, S Zhang, A Lidow 2022 IEEE Radiation Effects Data Workshop (REDW)(in conjunction with 2022 …, 2022 | 4 | 2022 |
| Mechanisms responsible for microwave properties in high performance dielectric materials S Zhang Arizona State University, 2016 | 4 | 2016 |
| EPC GaN transistor application readiness: phase ten testing A Pozo, S Zhang, R Strittmatter EPC Corp., El Segundo, CA, USA, Reliability Report. Available: https://epc …, 0 | 3 | |
| Using Test-to-Fail Methodology to Predict How GaN Devices Can Last More than 25 Years in Solar Applications S Zhang, S Gajare, R Garcia PCIM Asia 2023; International Exhibition and Conference for Power …, 2023 | 2 | 2023 |
| GaN Reliability and Lifetime Projections S Zhang, G Stecklein, R Garcia, J Glaser, Z Tang, R Strittmatter, A Lidow CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022 | 2 | 2022 |
| EPC eGaN FETs Reliability Testing: Phase Ten A Pozo, S Zhang, R Strittmatter | 2 | |
| Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs S Zhang, AE Espinoza, R Garcia, AP Arribas, R Strittmatter IEEE Power Electronics Magazine 11 (1), 55-61, 2024 | 1 | 2024 |
| Understanding Dynamic RDS (on) in GaN Devices A Pozo, R Strittmatter, S Zhang, A Lidow ECS Transactions 104 (7), 125, 2021 | 1 | 2021 |
