| Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017 | 567 | 2017 |
| Path towards graphene commercialization from lab to market W Kong, H Kum, SH Bae, J Shim, H Kim, L Kong, Y Meng, K Wang, C Kim, ... Nature nanotechnology 14 (10), 927-938, 2019 | 359 | 2019 |
| Heterogeneous integration of single-crystalline complex-oxide membranes HS Kum, H Lee, S Kim, S Lindemann, W Kong, K Qiao, P Chen, J Irwin, ... Nature 578 (7793), 75-81, 2020 | 311 | 2020 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 305 | 2018 |
| Integration of bulk materials with two-dimensional materials for physical coupling and applications SH Bae, H Kum, W Kong, Y Kim, C Choi, B Lee, P Lin, Y Park, J Kim Nature materials 18 (6), 550-560, 2019 | 291 | 2019 |
| UVB radiation generates sunburn pain and affects skin by activating epidermal TRPV4 ion channels and triggering endothelin-1 signaling C Moore, F Cevikbas, HA Pasolli, Y Chen, W Kong, C Kempkes, P Parekh, ... Proceedings of the National Academy of Sciences 110 (34), E3225-E3234, 2013 | 251 | 2013 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 248 | 2018 |
| Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices H Kum, D Lee, W Kong, H Kim, Y Park, Y Kim, Y Baek, SH Bae, K Lee, ... Nature Electronics 2 (10), 439-450, 2019 | 241 | 2019 |
| Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum TJ Lu, M Fanto, H Choi, P Thomas, J Steidle, S Mouradian, W Kong, ... Optics express 26 (9), 11147-11160, 2018 | 170 | 2018 |
| Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors Y Kim, JM Suh, J Shin, Y Liu, H Yeon, K Qiao, HS Kum, C Kim, HE Lee, ... Science 377 (6608), 859-864, 2022 | 159 | 2022 |
| Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy SH Bae, K Lu, Y Han, S Kim, K Qiao, C Choi, Y Nie, H Kim, HS Kum, ... Nature nanotechnology 15 (4), 272-276, 2020 | 109 | 2020 |
| Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices J Shim, DH Kang, Y Kim, H Kum, W Kong, SH Bae, I Almansouri, K Lee, ... Carbon 133, 78-89, 2018 | 102 | 2018 |
| Remote epitaxy H Kim, CS Chang, S Lee, J Jiang, J Jeong, M Park, Y Meng, J Ji, Y Kwon, ... Nature Reviews Methods Primers 2 (1), 40, 2022 | 78 | 2022 |
| Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes K Qiao, Y Liu, C Kim, RJ Molnar, T Osadchy, W Li, X Sun, H Li, ... Nano letters 21 (9), 4013-4020, 2021 | 51 | 2021 |
| Methods and apparatus for vertically stacked multicolor light-emitting diode (LED) display K Lee, W Kong, J Kim US Patent 10,517,155, 2019 | 39 | 2019 |
| High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl, K Qiao, KS Kim, BI Park, ... Nature Nanotechnology 18 (5), 464-470, 2023 | 30 | 2023 |
| GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ... AIP Advances 5 (6), 2015 | 18 | 2015 |
| Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy W Kong, WY Jiao, JC Li, K Collar, TH Kim, JH Leach, AS Brown Applied Physics Letters 107 (3), 2015 | 17 | 2015 |
| Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown AIP Advances 6 (3), 2016 | 15 | 2016 |
| Growth of GaAs1− xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics J Li, TH Kim, K Forghani, W Jiao, W Kong, K Collar, TF Kuech, AS Brown Journal of Applied Physics 116 (4), 2014 | 15 | 2014 |