| Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006 | 447 | 2006 |
| Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy system K Eberl, SS Iyer, S Zollner, JC Tsang, FK LeGoues Applied physics letters 60 (24), 3033-3035, 1992 | 397 | 1992 |
| Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ... Applied physics letters 81 (16), 2992-2994, 2002 | 341 | 2002 |
| Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry TE Tiwald, JA Woollam, S Zollner, J Christiansen, RB Gregory, ... Physical Review B 60 (16), 11464, 1999 | 190 | 1999 |
| Temperature dependence of the dielectric function and the interband critical-point parameters of GaP S Zollner, M Garriga, J Kircher, J Humlíček, M Cardona, G Neuhold Physical Review B 48 (11), 7915, 1993 | 186 | 1993 |
| Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates S Zollner, S Gopalan, M Cardona Journal of applied physics 68 (4), 1682-1693, 1990 | 162 | 1990 |
| Optical properties of bulk and thin-film on Si and Pt S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 156 | 2000 |
| Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors S Zollner, M Cardona, S Gopalan Physical Review B 45 (7), 3376, 1992 | 154 | 1992 |
| Model dielectric functions for native oxides on compound semiconductors S Zollner Applied physics letters 63 (18), 2523-2524, 1993 | 148 | 1993 |
| Visible and ultraviolet Raman scattering studies of alloys M Holtz, WM Duncan, S Zollner, R Liu Journal of Applied Physics 88 (5), 2523-2528, 2000 | 133 | 2000 |
| Optical and structural properties of alloys P Aella, C Cook, J Tolle, S Zollner, AVG Chizmeshya, J Kouvetakis Applied Physics Letters 84 (6), 888-890, 2004 | 121 | 2004 |
| Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ... Physical Review B 63 (12), 125313, 2001 | 118 | 2001 |
| Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si S Zollner, JG Chen, E Duda, T Wetteroth, SR Wilson, JN Hilfiker Journal of applied physics 85 (12), 8353-8361, 1999 | 115 | 1999 |
| Anneal of epitaxial layer in a semiconductor device S Zollner, V Dhandapani, PA Grudowski, GS Spencer US Patent 7,416,605, 2008 | 111 | 2008 |
| Intervalley deformation potentials and scattering rates in zinc blende semiconductors S Zollner, S Gopalan, M Cardona Applied physics letters 54 (7), 614, 1989 | 106 | 1989 |
| Optical constants of germanium and thermally grown germanium dioxide from 0.5 to 6.6 eV via a multisample ellipsometry investigation TN Nunley, NS Fernando, N Samarasingha, JM Moya, CM Nelson, ... Journal of Vacuum Science & Technology B 34 (6), 2016 | 102 | 2016 |
| Electronic and optical properties of NbO2 A O'Hara, TN Nunley, AB Posadas, S Zollner, AA Demkov Journal of Applied Physics 116 (21), 2014 | 102 | 2014 |
| Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ... Journal of applied physics 98 (5), 2005 | 101 | 2005 |
| High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ... Applied physics letters 75 (4), 484-486, 1999 | 91 | 1999 |
| Versatile buffer layer architectures based on Ge1− xSnx alloys R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ... Applied Physics Letters 86 (19), 2005 | 87 | 2005 |
José MenéndezProfessor of Physics, Arizona State Universityasu.edu의 이메일 확인됨