| Simulation of junctionless Si nanowire transistors with 3 nm gate length L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Applied Physics Letters 97 (6), 2010 | 124 | 2010 |
| Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 89 | 2019 |
| Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors A Grillo, E Faella, A Pelella, F Giubileo, L Ansari, F Gity, PK Hurley, ... Advanced Functional Materials 31 (43), 2105722, 2021 | 76 | 2021 |
| Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ... ACS applied materials & interfaces 12 (5), 6022-6029, 2020 | 74 | 2020 |
| A proposed confinement modulated gap nanowire transistor based on a metal (tin) L Ansari, G Fagas, JP Colinge, JC Greer Nano letters 12 (5), 2222-2227, 2012 | 63 | 2012 |
| Rhenium-doped MoS2 films T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ... Applied Physics Letters 111 (20), 2017 | 53 | 2017 |
| Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering D Dastan, K Shan, A Jafari, F Gity, XT Yin, Z Shi, ND Alharbi, BA Reshi, ... Applied Physics A 128 (5), 400, 2022 | 42 | 2022 |
| Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films F Gity, L Ansari, M Lanius, P Schüffelgen, G Mussler, D Grützmacher, ... Applied Physics Letters 110 (9), 2017 | 40 | 2017 |
| Imaging and identification of point defects in PtTe2 (https://doi.org/10.1038/s41699-020-00196-8) K Zhussupbekov, L Ansari, JB McManus, A Zhussupbekova, IV Shvets, ... npj 2D Materials and Applications 5 (14), 1-10, 2021 | 33* | 2021 |
| Gas sensing selectivity of SnO2-xNiO sensors for homogeneous gases and its selectivity mechanism: Experimental and theoretical studies XT Yin, D Dastan, F Gity, J Li, Z Shi, ND Alharbi, Y Liu, XM Tan, XC Gao, ... Sensors and Actuators A: Physical 354, 114273, 2023 | 28 | 2023 |
| Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Solid-state electronics 71, 58-62, 2012 | 28 | 2012 |
| Metal-semimetal Schottky diode relying on quantum confinement F Gity, L Ansari, C König, GA Verni, JD Holmes, B Long, M Lanius, ... Microelectronic Engineering 195, 21-25, 2018 | 20 | 2018 |
| Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires L Ansari, G Fagas, JC Greer Applied Physics Letters 105 (12), 2014 | 16 | 2014 |
| First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors L Ansari, B Feldman, G Fagas, CM Lacambra, MG Haverty, KJ Kuhn, ... IEEE transactions on nanotechnology 12 (6), 1075-1081, 2013 | 16 | 2013 |
| A sub kBT/q semimetal nanowire field effect transistor L Ansari, G Fagas, F Gity, JC Greer Applied Physics Letters 109 (6), 2016 | 15 | 2016 |
| Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm J MacHale, F Meaney, N Kennedy, L Eaton, G Mirabelli, M White, ... Journal of Applied Physics 125 (22), 2019 | 14 | 2019 |
| An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects A Zarifkar, L Ansari, MK Moravvej-Farshi Fiber and Integrated Optics 28 (4), 249-267, 2009 | 14 | 2009 |
| Ó.; Cullen, CP L Ansari, S Monaghan, N McEvoy, C Coileáin Lin, J, 1-8, 0 | 13 | |
| Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires D Sharma, L Ansari, B Feldman, M Iakovidis, JC Greer, G Fagas Journal of Applied Physics 113 (20), 2013 | 12 | 2013 |
| Structural and electrical characterisation of PtS from H2S-converted Pt S Monaghan, EM Coleman, L Ansari, J Lin, A Buttimer, PA Coleman, ... Applied Materials Today 25, 101163, 2021 | 10 | 2021 |
Farzan GitySenior Research Scientist, Tyndall National Institute, University College Corktyndall.ie의 이메일 확인됨
