| Non-volatile memory cell and fabrication method thereof CI Hsieh, SS Tsai, CR Wu US Patent 8,089,060, 2012 | 77 | 2012 |
| Structural properties and electrical characteristics of praseodymium oxide gate dielectrics TM Pan, FJ Tsai, CI Hsieh, TW Wu Electrochemical and solid-state letters 10 (4), G21, 2007 | 31 | 2007 |
| Magnetoresistive random access memory element and fabrication method thereof CI Hsieh, CR Wu US Patent 8,535,954, 2013 | 22 | 2013 |
| Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same TY Huang, V Bhat, V Antonov, CI Hsieh, C Carlson US Patent 8,564,095, 2013 | 20 | 2013 |
| Cross point memory array devices CI Hsieh, CR Wu US Patent App. 12/578,496, 2011 | 18 | 2011 |
| Resistive random access memory structure with tri-layer resistive stack CI Hsieh, CR Wu, NT Shih US Patent 8,901,527, 2014 | 13 | 2014 |
| Good High-Temperature Stability of Capacitors TM Pan, CI Hsieh, TY Huang, JR Yang, PS Kuo IEEE electron device letters 28 (11), 954-956, 2007 | 12 | 2007 |
| Method of fabricating rram CI Hsieh, CR Wu, SS Tsai, TY Huang US Patent App. 12/242,946, 2010 | 11 | 2010 |
| Capacitor array and method of fabricating the same JJ Huang, CC Lee, SS Tsai, CS Chen, ST Hsu, CW Lay, CI Hsieh, CK Lin US Patent 8,921,977, 2014 | 5 | 2014 |
| Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition CI Hsieh, TM Pan, JC Lin, YB Peng, TY Huang, CR Wu, S Shih Applied Surface Science 255 (6), 3769-3772, 2009 | 5 | 2009 |
| Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material TY Huang, V Bhat, V Antonov, CI Hsieh, C Carlson US Patent 8,748,283, 2014 | 4 | 2014 |
| Semiconductor device with rutile titanium oxide dielectric film CI Hsieh, D Damjanovic US Patent App. 13/732,442, 2014 | 3 | 2014 |
| Method for fabricating a semiconductor capacitpr device TY Huang, SY Nieh, CI Hsieh US Patent App. 12/167,239, 2009 | 3 | 2009 |
| Magnetoresistive random access memory element and fabrication method thereof CI Hsieh, CR Wu US Patent 8,916,392, 2014 | 2 | 2014 |
| Forming-free resistive switching of TiOx layers with oxygen injection treatments CI Hsieh, JH Jao, WC Chen, CR Wu, NT Shih Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011 | 2 | 2011 |
| Method for forming rutile titanium oxide and the stacking structure thereof CI Hsieh, V Bhat, J Sigman, V Antonov, WH Hsu US Patent 8,659,869, 2014 | 1 | 2014 |
| Enhancement in thermal stability of metal-insulator-metal capacitors for deep trench DRAM application CI Hsieh, TM Pan, TY Huang, WP Liang, JC Lin, CR Wu, S Shih ECS Transactions 13 (2), 285, 2008 | 1 | 2008 |
| Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering TM Pan, CI Hsieh, FJ Tsai, TW Wu ECS Transactions 6 (1), 247, 2007 | 1 | 2007 |
| Method for fabricating capacitor having rutile titanium oxide dielectric film CI Hsieh, V Bhat US Patent 9,202,860, 2015 | | 2015 |
| Process for forming a capacitor structure with rutile titanium oxide dielectric film CI Hsieh, D Damjanovic US Patent 9,153,640, 2015 | | 2015 |
