| Interfacial characteristics of and NO nitrided grown on SiC by rapid thermal processing H Li, S Dimitrijev, HB Harrison, D Sweatman Applied physics letters 70 (15), 2028-2030, 1997 | 386 | 1997 |
| Effects of nitridation in gate oxides grown on 4H-SiC P Jamet, S Dimitrijev, P Tanner Journal of Applied Physics 90 (10), 5058-5063, 2001 | 343 | 2001 |
| Principles of semiconductor devices S Dimitrijev (No Title), 2012 | 321 | 2012 |
| The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review HP Phan, DV Dao, K Nakamura, S Dimitrijev, NT Nguyen Journal of Microelectromechanical systems 24 (6), 1663-1677, 2015 | 252 | 2015 |
| Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation VV Afanas’ev, A Stesmans, F Ciobanu, G Pensl, KY Cheong, S Dimitrijev Applied Physics Letters 82 (4), 568-570, 2003 | 248 | 2003 |
| Understanding semiconductor devices S Dimitrijev (No Title), 2000 | 206 | 2000 |
| Physical properties of and NO-nitrided gate oxides grown on 4H SiC P Jamet, S Dimitrijev Applied Physics Letters 79 (3), 323-325, 2001 | 199 | 2001 |
| Band alignment and defect states at SiC/oxide interfaces VV Afanas’Ev, F Ciobanu, S Dimitrijev, G Pensl, A Stesmans Journal of Physics: Condensed Matter 16 (17), S1839, 2004 | 182 | 2004 |
| Advances in SiC power MOSFET technology S Dimitrijev, P Jamet Microelectronics reliability 43 (2), 225-233, 2003 | 143 | 2003 |
| Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 134 | 2018 |
| Investigation of nitric oxide and Ar annealed interfaces by x-ray photoelectron spectroscopy H Li, S Dimitrijev, D Sweatman, HB Harrison, P Tanner, B Feil Journal of applied Physics 86 (8), 4316-4321, 1999 | 133 | 1999 |
| Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti Mrs Bulletin 40 (5), 399-405, 2015 | 113 | 2015 |
| Nitridation of silicon-dioxide films grown on 6H silicon carbide S Dimitrijev, HF Li, HB Harrison, D Sweatman IEEE Electron Device Letters 18 (5), 175-177, 1997 | 111 | 1997 |
| High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient ZQ Yao, HB Harrison, S Dimitrijev, D Sweatman, YT Yeow Applied physics letters 64 (26), 3584-3586, 1994 | 110 | 1994 |
| Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison Thin solid films 519 (19), 6443-6446, 2011 | 109 | 2011 |
| Electrical and physical characterization of gate oxides on grown in diluted KY Cheong, S Dimitrijev, J Han, HB Harrison Journal of applied physics 93 (9), 5682-5686, 2003 | 103 | 2003 |
| Analysis of CMOS transistor instabilities S Dimitrijev, N Stojadinović Solid-state electronics 30 (10), 991-1003, 1987 | 96 | 1987 |
| Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ... IEEE Transactions on Electron Devices 58 (1), 259-265, 2010 | 82 | 2010 |
| Analysis of subthreshold carrier transport for ultimate DGMOSFET HK Jung, S Dimitrijev IEEE transactions on electron devices 53 (4), 685-691, 2006 | 82 | 2006 |
| Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation R Schörner, P Friedrichs, D Peters, D Stephani, S Dimitrijev, P Jamet Applied physics letters 80 (22), 4253-4255, 2002 | 81 | 2002 |