Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1 1̄ 00) grown on γ-LiAlO 2 YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ... Journal of Applied Physics 92 (10), 5714-5719, 2002 | 193 | 2002 |
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog Physical Review B 67 (16), 165205, 2003 | 146 | 2003 |
Nonpolar In x Ga 1− x N/GaN (11¯ 0 0) multiple quantum wells grown on γ− LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy YJ Sun, O Brandt, S Cronenberg, S Dhar, HT Grahn, KH Ploog, ... Physical Review B 67 (4), 041306, 2003 | 133 | 2003 |
Polarization anisotropy of the photoluminescence of -plane (In,Ga)N/GaN multiple quantum wells YJ Sun, O Brandt, M Ramsteiner, HT Grahn, KH Ploog Applied Physics Letters 82 (22), 3850-3852, 2003 | 128 | 2003 |
Determination of the azimuthal orientational spread of GaN films by x-ray diffraction YJ Sun, O Brandt, TY Liu, A Trampert, KH Ploog, J Bläsing, A Krost Applied physics letters 81 (26), 4928-4930, 2002 | 112 | 2002 |
Growth of M-plane GaN films on with high phase purity YJ Sun, O Brandt, KH Ploog Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 94 | 2003 |
Ga adsorption and desorption kinetics on M-plane GaN O Brandt, YJ Sun, L Däweritz, KH Ploog Physical Review B 69 (16), 165326, 2004 | 67 | 2004 |
In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures CJ Deatcher, C Liu, S Pereira, M Lada, AG Cullis, YJ Sun, O Brandt, ... Semiconductor science and technology 18 (4), 212, 2003 | 53 | 2003 |
Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy TY Liu, A Trampert, YJ Sun, O Brandt, KH Ploog Philosophical magazine letters 84 (7), 435-441, 2004 | 49 | 2004 |
In surface segregation in -plane (In,Ga)N/GaN multiple quantum well structures Y Jun Sun, O Brandt, B Jenichen, KH Ploog Applied Physics Letters 83 (25), 5178-5180, 2003 | 48 | 2003 |
Polarization filtering by nonpolar M-plane GaN films on LiAlO2 P Misra, YJ Sun, O Brandt, HT Grahn Journal of applied physics 96 (12), 7029-7035, 2004 | 35 | 2004 |
Bio hue lamp MPJ Peeters, RC Broersma, YJ Sun, RT Wegh, D Sekulovski US Patent 10,434,280, 2019 | 30 | 2019 |
In-plane polarization anisotropy and polarization rotation for M-plane GaN films on LiAlO2 P Misra, YJ Sun, O Brandt, HT Grahn Applied physics letters 83 (21), 4327-4329, 2003 | 24 | 2003 |
Properties of (In, Ga) N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy O Brandt, P Waltereit, S Dhar, U Jahn, YJ Sun, A Trampert, KH Ploog, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 21 | 2002 |
Lighting device, luminaire and lighting device assembly method Q Luo, YJ Sun, X Yang, M Chen, D Gehrels, L Ximei, MEJ Sipkes, ... US Patent 9,958,118, 2018 | 19 | 2018 |
Growth of M-plane GaN on γ-LiAlO2 (100): the role of Ga adsorption/desorption O Brandt, YJ Sun, L Däweritz, KH Ploog Physica E: Low-dimensional Systems and Nanostructures 23 (3-4), 339-346, 2004 | 15 | 2004 |
Strain relaxation in AlN/GaN bilayer films grown on for nanoelectromechanical systems Y Takagaki, YJ Sun, O Brandt, KH Ploog Applied physics letters 84 (23), 4756-4758, 2004 | 15 | 2004 |
Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy O Brandt, YJ Sun, HP Schönherr, KH Ploog, P Waltereit, SH Lim, ... Applied physics letters 83 (1), 90-92, 2003 | 13 | 2003 |
Photoluminescence intensity of GaN films with widely varying dislocation density YJ Sun, O Brandt, KH Ploog Journal of materials research 18 (5), 1247-1250, 2003 | 13 | 2003 |
Highly anisotropic dispersion of surface acoustic waves in M-plane GaN layers grown on γ− LiAlO 2 (100) Y Takagaki, C Hucho, E Wiebicke, YJ Sun, O Brandt, M Ramsteiner, ... Physical Review B 69 (11), 115317, 2004 | 9 | 2004 |