| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 2016 | 397 | 2016 |
| -Ga2O3 MOSFETs for Radio Frequency Operation AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ... IEEE Electron Device Letters 38 (6), 790-793, 2017 | 333 | 2017 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018 | 287 | 2018 |
| Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron device letters 39 (1), 67-70, 2017 | 251 | 2017 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 215 | 2017 |
| Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ... Applied Physics Letters 111 (1), 2017 | 195 | 2017 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 141 | 2019 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 2017 | 98 | 2017 |
| Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ... Applied Physics Letters 87 (17), 2005 | 83 | 2005 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 59 | 2020 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 51 | 2019 |
| Sub-micron gallium oxide radio frequency field-effect transistors KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ... 2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018 | 46 | 2018 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 45 | 2020 |
| Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ... IEEE Microwave and wireless components letters 16 (12), 681-683, 2006 | 44 | 2006 |
| Improved oxide passivation of AlGaN∕ GaN high electron mobility transistors BP Gila, M Hlad, AH Onstine, R Frazier, GT Thaler, A Herrero, E Lambers, ... Applied Physics Letters 87 (16), 2005 | 43 | 2005 |
| Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors BS Kang, R Mehandru, S Kim, F Ren, RC Fitch, JK Gillespie, N Moser, ... Applied physics letters 84 (23), 4635-4637, 2004 | 42 | 2004 |
| Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ... Applied Physics Letters 117 (24), 2020 | 37 | 2020 |
| Toward realization of Ga2O3for power electronics applications G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 37 | 2017 |
| Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ... IEEE Transactions on Electron Devices 67 (1), 204-211, 2019 | 32 | 2019 |
| Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors RC Fitch, JK Gillespie, N Moser, T Jenkins, J Sewell, D Via, A Crespo, ... Applied physics letters 84 (9), 1495-1497, 2004 | 31 | 2004 |
