| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 487 | 2020 |
| Light-emitting semiconductor device M Ishikawa, H Sugawara, Y Nishikawa, M Onomura, S Saito, PJ Parbrook, ... US Patent 5,696,389, 1997 | 437 | 1997 |
| Semicoductor device having a hetero interface with a lowered barrier S Saito, M Onomura, Y Nishikawa, M Ishikawa, PJ Parbrook US Patent 5,821,555, 1998 | 273 | 1998 |
| Many-beam dynamical simulation of electron backscatter diffraction patterns A Winkelmann, C Trager-Cowan, F Sweeney, AP Day, P Parbrook Ultramicroscopy 107 (4-5), 414-421, 2007 | 255 | 2007 |
| Micro‐light emitting diode: from chips to applications PJ Parbrook, B Corbett, J Han, TY Seong, H Amano Laser & Photonics Reviews 15 (5), 2000133, 2021 | 199 | 2021 |
| Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors WS Tan, PA Houston, PJ Parbrook, DA Wood, G Hill, CR Whitehouse Applied physics letters 80 (17), 3207-3209, 2002 | 146 | 2002 |
| Doping of III-nitride materials P Pampili, PJ Parbrook Materials Science in Semiconductor Processing 62, 180-191, 2017 | 122 | 2017 |
| Valence band offset of InN∕ AlN heterojunctions measured by x-ray photoelectron spectroscopy PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ... Applied physics letters 90 (13), 2007 | 119 | 2007 |
| Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films C Trager-Cowan, F Sweeney, PW Trimby, AP Day, A Gholinia, ... Physical Review B—Condensed Matter and Materials Physics 75 (8), 085301, 2007 | 113 | 2007 |
| A study of dislocations in AlN and GaN films grown on sapphire substrates J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis Journal of crystal growth 282 (3-4), 290-296, 2005 | 112 | 2005 |
| An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ... Nanoscale 7 (40), 16658-16665, 2015 | 111 | 2015 |
| Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells JP O’Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook Applied Physics Letters 83 (10), 1965-1967, 2003 | 106 | 2003 |
| Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors WS Tan, PA Houston, PJ Parbrook, G Hill, RJ Airey Journal of Physics D: Applied Physics 35 (7), 595, 2002 | 100 | 2002 |
| Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials<? format?> Using the Scanning Electron Microscope G Naresh-Kumar, B Hourahine, PR Edwards, AP Day, A Winkelmann, ... Physical review letters 108 (13), 135503, 2012 | 86 | 2012 |
| Composition-dependent band gap and band-edge bowing in AlInN: a combined theoretical and experimental study S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly Applied Physics Express 6 (12), 121001, 2013 | 84 | 2013 |
| In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy KB Ozanyan, PJ Parbrook, M Hopkinson, CR Whitehouse, Z Sobiesierski, ... Journal of applied physics 82 (1), 474-476, 1997 | 83 | 1997 |
| The MOCVD growth without prereaction of ZnSe and ZnS layers PJ Wright, PJ Parbrook, B Cockayne, AC Jones, ED Orrell, KP O'Donnell, ... Journal of crystal growth 94 (2), 441-447, 1989 | 79 | 1989 |
| Modeling and simulation of bulk gallium nitride power semiconductor devices G Sabui, PJ Parbrook, M Arredondo-Arechavala, ZJ Shen Aip Advances 6 (5), 2016 | 77 | 2016 |
| Nature of acceptor states in magnesium-doped gallium nitride GN Aliev, S Zeng, JJ Davies, D Wolverson, SJ Bingham, PJ Parbrook, ... Physical Review B—Condensed Matter and Materials Physics 71 (19), 195204, 2005 | 77 | 2005 |
| Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods M Conroy, VZ Zubialevich, H Li, N Petkov, JD Holmes, PJ Parbrook Journal of Materials Chemistry C 3 (2), 431-437, 2015 | 72 | 2015 |
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