Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon T Frost, S Jahangir, E Stark, S Deshpande, A Hazari, C Zhao, BS Ooi, ... Nano letters 14 (8), 4535-4541, 2014 | 182 | 2014 |
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ... Nanoscale 7 (40), 16658-16665, 2015 | 111 | 2015 |
Molecular beam epitaxial growth and optical properties of red-emitting (λ= 650 nm) InGaN/GaN disks-in-nanowires on silicon S Jahangir, M Mandl, M Strassburg, P Bhattacharya Applied Physics Letters 102 (7), 2013 | 99 | 2013 |
Formation and nature of InGaN quantum dots in GaN nanowires S Deshpande, T Frost, L Yan, S Jahangir, A Hazari, X Liu, ... Nano letters 15 (3), 1647-1653, 2015 | 83 | 2015 |
Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity J Heo, S Jahangir, B Xiao, P Bhattacharya Nano letters 13 (6), 2376-2380, 2013 | 66 | 2013 |
Misorientation defects in coalesced self-catalyzed GaN nanowires KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick Journal of crystal growth 371, 142-147, 2013 | 61 | 2013 |
Red-Emitting ( nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon S Jahangir, T Schimpke, M Strassburg, KA Grossklaus, JM Millunchick, ... IEEE Journal of Quantum Electronics 50 (7), 530-537, 2014 | 54 | 2014 |
Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya Applied Physics Letters 100 (18), 2012 | 53 | 2012 |
Structural and optical properties of disc-in-wire InGaN/GaN LEDs L Yan, S Jahangir, SA Wight, B Nikoobakht, P Bhattacharya, ... Nano letters 15 (3), 1535-1539, 2015 | 45 | 2015 |
Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon S Jahangir, T Frost, A Hazari, L Yan, E Stark, T LaMountain, ... Applied Physics Letters 106 (7), 2015 | 40 | 2015 |
Spin diffusion in bulk GaN measured with MnAs spin injector S Jahangir, F Doğan, H Kum, A Manchon, P Bhattacharya Physical Review B—Condensed Matter and Materials Physics 86 (3), 035315, 2012 | 32 | 2012 |
Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes S Jahangir, I Pietzonka, M Strassburg, P Bhattacharya Applied Physics Letters 105 (11), 2014 | 28 | 2014 |
InGaN/GaN nanowires grown on SiO_2 and light emitting diodes with low turn on voltages Y Park, S Jahangir, Y Park, P Bhattacharya, J Heo Optics express 23 (11), A650-A656, 2015 | 24 | 2015 |
Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes S Jahangir, A Banerjee, P Bhattacharya physica status solidi c 10 (5), 812-815, 2013 | 20 | 2013 |
Temperature-dependent measurement of Auger recombination in In0. 40Ga0. 60N/GaN red-emitting (λ= 630 nm) quantum dots T Frost, A Banerjee, S Jahangir, P Bhattacharya Applied Physics Letters 104 (8), 2014 | 15 | 2014 |
III-nitride electrically pumped visible and near-infrared nanowire lasers on (001) silicon P Bhattacharya, A Hazari, S Jahangir, W Guo, T Frost Semiconductors and Semimetals 96, 385-409, 2017 | 12 | 2017 |
Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED TK Ng, C Zhao, C Shen, S Jahangir, B Janjua, AB Slimane, CH Kang, ... 2014 Conference on Lasers and Electro-optics (CLEO)-Laser Science to …, 2014 | 12 | 2014 |
InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy A Banerjee, T Frost, S Jahangir, E Stark, P Bhattacharya Journal of crystal growth 378, 566-570, 2013 | 11 | 2013 |
A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor S Jahangir, QDM Khosru 2009 IEEE International Conference of Electron Devices and Solid-State …, 2009 | 10 | 2009 |
III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range P Bhattacharya, A Hazari, S Jahangir Novel In-Plane Semiconductor Lasers XVII 10553, 1055302, 2018 | 9 | 2018 |