| Large-area synthesis of high-quality and uniform graphene films on copper foils X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ... science 324 (5932), 1312-1314, 2009 | 14149 | 2009 |
| Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019 | 1375 | 2019 |
| Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 2009 | 1372 | 2009 |
| The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013 | 1311 | 2013 |
| van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 759 | 2016 |
| Hubbard model physics in transition metal dichalcogenide moiré bands F Wu, T Lovorn, E Tutuc, AH MacDonald Physical review letters 121 (2), 026402, 2018 | 717 | 2018 |
| Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 2012 | 665 | 2012 |
| Topological insulators in twisted transition metal dichalcogenide homobilayers F Wu, T Lovorn, E Tutuc, I Martin, AH MacDonald Physical review letters 122 (8), 086402, 2019 | 662 | 2019 |
| Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances C Wu, N Arju, G Kelp, JA Fan, J Dominguez, E Gonzales, E Tutuc, I Brener, ... Nature communications 5 (1), 3892, 2014 | 575 | 2014 |
| The marvels of moiré materials EY Andrei, DK Efetov, P Jarillo-Herrero, AH MacDonald, KF Mak, ... Nature Reviews Materials 6 (3), 201-206, 2021 | 566 | 2021 |
| Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017 | 564 | 2017 |
| Counterflow Measurements in Strongly Correlated GaAs Hole Bilayers:<? format?> Evidence for Electron-Hole Pairing E Tutuc, M Shayegan, DA Huse Physical review letters 93 (3), 036802, 2004 | 414 | 2004 |
| Flat bands in twisted bilayer transition metal dichalcogenides Z Zhang, Y Wang, K Watanabe, T Taniguchi, K Ueno, E Tutuc, BJ LeRoy Nature Physics 16 (11), 1093-1096, 2020 | 350 | 2020 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 333 | 2015 |
| Photonic-crystal exciton-polaritons in monolayer semiconductors L Zhang, R Gogna, W Burg, E Tutuc, H Deng Nature communications 9 (1), 713, 2018 | 314 | 2018 |
| Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald IEEE Electron Device Letters 30 (2), 158-160, 2008 | 298 | 2008 |
| Correlated insulating states in twisted double bilayer graphene GW Burg, J Zhu, T Taniguchi, K Watanabe, AH MacDonald, E Tutuc Physical review letters 123 (19), 197702, 2019 | 285 | 2019 |
| Topologically protected helical states in minimally twisted bilayer graphene S Huang, K Kim, DK Efimkin, T Lovorn, T Taniguchi, K Watanabe, ... Physical review letters 121 (3), 037702, 2018 | 254 | 2018 |
| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 248 | 2016 |
| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 246 | 2015 |
Mansour ShayeganProfessor of Electrical Engineering, Princeton University確認したメール アドレス: princeton.edu
