| Transfer printing by kinetic control of adhesion to an elastomeric stamp MA Meitl, ZT Zhu, V Kumar, KJ Lee, X Feng, YY Huang, I Adesida, ... Nature materials 5 (1), 33-38, 2006 | 1996 | 2006 |
| Recessed-gate enhancement-mode GaN HEMT with high threshold voltage WB Lanford, T Tanaka, Y Otoki, I Adesida Electronics Letters 41 (7), 449-450, 2005 | 389 | 2005 |
| Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations C Youtsey, LT Romano, I Adesida Applied physics letters 73 (6), 797-799, 1998 | 332 | 1998 |
| AlGaN/GaN HEMTs on SiC with fT of over 120 GHz V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ... IEEE Electron Device Letters 23 (8), 455-457, 2002 | 327 | 2002 |
| AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise W Lu, J Yang, MA Khan, I Adesida IEEE Transactions on Electron Devices 48 (3), 581-585, 2001 | 308 | 2001 |
| Highly anisotropic photoenhanced wet etching of -type GaN C Youtsey, I Adesida, G Bulman Applied physics letters 71 (15), 2151-2153, 1997 | 297 | 1997 |
| Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) I Adesida, A Mahajan, E Andideh, MA Khan, DT Olsen, JN Kuznia Applied physics letters 63 (20), 2777-2779, 1993 | 282 | 1993 |
| Schottky barrier properties of various metals on n-type GaN AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida Semiconductor Science and Technology 11 (10), 1464, 1996 | 267 | 1996 |
| Metal contacts to n-type GaN AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida Journal of Electronic Materials 27, 255-260, 1998 | 265 | 1998 |
| Smooth -type GaN surfaces by photoenhanced wet etching C Youtsey, I Adesida, LT Romano, G Bulman Applied Physics Letters 72 (5), 560-562, 1998 | 219 | 1998 |
| High rate etching of SiC using inductively coupled plasma reactive ion etching in -based gas mixtures FA Khan, I Adesida Applied physics letters 75 (15), 2268-2270, 1999 | 211 | 1999 |
| Buckled and wavy ribbons of GaAs for high‐performance electronics on elastomeric substrates Y Sun, V Kumar, I Adesida, JA Rogers Advanced Materials 18 (21), 2857-2862, 2006 | 196 | 2006 |
| A comparative study of surface passivation on AlGaN/GaN HEMTs W Lu, V Kumar, R Schwindt, E Piner, I Adesida Solid-State Electronics 46 (9), 1441-1444, 2002 | 196 | 2002 |
| Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on V Kumar, L Zhou, D Selvanathan, I Adesida Journal of applied physics 92 (3), 1712-1714, 2002 | 184 | 2002 |
| Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching C Youtsey, LT Romano, RJ Molnar, I Adesida Applied physics letters 74 (23), 3537-3539, 1999 | 182 | 1999 |
| DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates AT Ping, Q Chen, JW Yang, MA Khan, I Adesida IEEE Electron Device Letters 19 (2), 54-56, 1998 | 176 | 1998 |
| The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN AT Ping, Q Chen, JW Yang, MA Khan, I Adesida Journal of Electronic Materials 27, 261-265, 1998 | 156 | 1998 |
| Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer HK Kim, KK Kim, SJ Park, TY Seong, I Adesida Journal of applied physics 94 (6), 4225-4227, 2003 | 152 | 2003 |
| Radiolysis and resolution limits of inorganic halide resists A Muray, M Scheinfein, M Isaacson, I Adesida Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 151 | 1985 |
| In-plane bandgap control in porous GaN through electroless wet chemical etching X Li, YW Kim, PW Bohn, I Adesida Applied Physics Letters 80 (6), 980-982, 2002 | 148 | 2002 |
Patrick Fayelectrical engineering, University of Notre Dame確認したメール アドレス: nd.edu
