| Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction M Suri, O Bichler, D Querlioz, O Cueto, L Perniola, V Sousa, D Vuillaume, ... 2011 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2011 | 388 | 2011 |
| A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 345 | 2009 |
| Bio-inspired stochastic computing using binary CBRAM synapses M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ... IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013 | 272 | 2013 |
| HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015 | 232 | 2015 |
| Visual pattern extraction using energy-efficient “2-PCM synapse” neuromorphic architecture O Bichler, M Suri, D Querlioz, D Vuillaume, B DeSalvo, C Gamrat IEEE Transactions on Electron Devices 59 (8), 2206-2214, 2012 | 223 | 2012 |
| CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ... 2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012 | 175 | 2012 |
| Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ... IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001 | 175 | 2001 |
| Physical aspects of low power synapses based on phase change memory devices M Suri, O Bichler, D Querlioz, B Traoré, O Cueto, L Perniola, V Sousa, ... Journal of Applied Physics 112 (5), 2012 | 170 | 2012 |
| Electrical behavior of phase-change memory cells based on GeTe L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ... IEEE Electron Device Letters 31 (5), 488-490, 2010 | 167 | 2010 |
| Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016 | 140 | 2016 |
| Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ... IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004 | 137 | 2004 |
| How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ... IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003 | 116 | 2003 |
| Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron Microelectronic Engineering 72 (1-4), 388-394, 2004 | 112 | 2004 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 111 | 2011 |
| Carbon-doped GeTe: a promising material for phase-change memories GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ... Solid-State Electronics 65, 197-204, 2011 | 106 | 2011 |
| HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations B Traoré, P Blaise, E Vianello, L Perniola, B De Salvo, Y Nishi IEEE Transactions on Electron Devices 63 (1), 360-368, 2015 | 105 | 2015 |
| On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying B Traoré, P Blaise, E Vianello, H Grampeix, S Jeannot, L Perniola, ... IEEE Transactions on Electron Devices 62 (12), 4029-4036, 2015 | 95 | 2015 |
| Experimental and theoretical investigation of nonvolatile memory data-retention B De Salvo, G Ghibaudo, G Pananakakis, G Reimbold, F Mondond, ... IEEE Transactions on Electron Devices 46 (7), 1518-1524, 1999 | 90 | 1999 |
| Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... 2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014 | 89 | 2014 |
| Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration? T Ernst, L Duraffourg, C Dupre, E Bernard, P Andreucci, S Bécu, E Ollier, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 85 | 2008 |
Gerard GhibaudoIMEP-LAHC/CROMA, Minatec-INP Grenoble確認したメール アドレス: minatec.inpg.fr
