| Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors T Oshima, T Okuno, S Fujita Japanese Journal of Applied Physics 46 (11R), 7217, 2007 | 619 | 2007 |
| Carrier concentration dependence of band gap shift in n-type ZnO: Al films JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, ... Journal of Applied Physics 101 (8), 2007 | 533 | 2007 |
| Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates T Oshima, T Okuno, N Arai, N Suzuki, S Ohira, S Fujita Applied physics express 1 (1), 011202, 2008 | 484 | 2008 |
| ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition JG Lu, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima, S Fujita Journal of Crystal Growth 299 (1), 1-10, 2007 | 219 | 2007 |
| Flame detection by a β-Ga2O3-based sensor T Oshima, T Okuno, N Arai, N Suzuki, H Hino, S Fujita Japanese Journal of Applied Physics 48 (1R), 011605, 2009 | 204 | 2009 |
| β-Al2xGa2-2xO3 thin film growth by molecular beam epitaxy T Oshima, T Okuno, N Arai, Y Kobayashi, S Fujita Japanese Journal of Applied Physics 48 (7R), 070202, 2009 | 168 | 2009 |
| Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy T Oshima, N Arai, N Suzuki, S Ohira, S Fujita Thin Solid Films 516 (17), 5768-5771, 2008 | 166 | 2008 |
| Carrier confinement observed at modulation-doped β-(AlxGa1− x) 2O3/Ga2O3 heterojunction interface T Oshima, Y Kato, N Kawano, A Kuramata, S Yamakoshi, S Fujita, T Oishi, ... Applied Physics Express 10 (3), 035701, 2017 | 144 | 2017 |
| Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition T Oshima, T Nakazono, A Mukai, A Ohtomo Journal of crystal growth 359, 60-63, 2012 | 132 | 2012 |
| Carrier concentration induced band-gap shift in Al-doped Zn1− xMgxO thin films JG Lu, S Fujita, T Kawaharamura, H Nishinaka, Y Kamada, T Ohshima Applied physics letters 89 (26), 2006 | 132 | 2006 |
| Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes M Kasu, K Hanada, T Moribayashi, A Hashiguchi, T Oshima, T Oishi, ... Japanese Journal of Applied Physics 55 (12), 1202BB, 2016 | 104 | 2016 |
| Properties of Ga2O3‐based (InxGa1–x) 2O3 alloy thin films grown by molecular beam epitaxy T Oshima, S Fujita physica status solidi c 5 (9), 3113-3115, 2008 | 104 | 2008 |
| Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects T Oshima, A Hashiguchi, T Moribayashi, K Koshi, K Sasaki, A Kuramata, ... Japanese Journal of Applied Physics 56 (8), 086501, 2017 | 94 | 2017 |
| Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3 M Kasu, T Oshima, K Hanada, T Moribayashi, A Hashiguchi, T Oishi, ... Japanese Journal of Applied Physics 56 (9), 091101, 2017 | 86 | 2017 |
| Wet etching of β-Ga2O3 substrates T Oshima, T Okuno, N Arai, Y Kobayashi, S Fujita Japanese journal of applied physics 48 (4R), 040208, 2009 | 80 | 2009 |
| Band-gap narrowing in α-(CrxFe1-x)2O3 solid-solution films H Mashiko, T Oshima, A Ohtomo Applied Physics Letters 99 (24), 241904, 2011 | 70 | 2011 |
| Growth of SnO2 crystalline thin films by mist chemical vapour deposition method T Okuno, T Oshima, SD Lee, S Fujita physica status solidi c 8 (2), 540-542, 2011 | 66 | 2011 |
| Formation of indium–tin oxide ohmic contacts for β-Ga2O3 T Oshima, R Wakabayashi, M Hattori, A Hashiguchi, N Kawano, K Sasaki, ... Japanese Journal of Applied Physics 55 (12), 1202B7, 2016 | 65 | 2016 |
| β-Ga2O3 single crystal as a photoelectrode for water splitting T Oshima, K Kaminaga, H Mashiko, A Mukai, K Sasaki, T Masui, ... Japanese journal of applied physics 52 (11R), 111102, 2013 | 62 | 2013 |
| Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1− x) 2O3 films R Wakabayashi, T Oshima, M Hattori, K Sasaki, T Masui, A Kuramata, ... Journal of Crystal Growth 424, 77-79, 2015 | 61 | 2015 |