オープン アクセスを義務付けられた論文 - Anant Agarwal詳細
一般には非公開: 3 件
Developing 13-kV 4H-SiC MOSFETs: Significance of implant straggle, channel design, and MOS process on static performance
N Yun, D Kim, J Lynch, AJ Morgan, W Sung, M Kang, A Agarwal, R Green, ...
IEEE Transactions on Electron Devices 67 (10), 4346-4353, 2020
委任: US Department of Defense
Optically-switched high-voltage bipolar SiC device
SK Mazumder, A Mojab, L Cheng, AK Agarwal, CJ Scozzie
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 107-109, 2014
委任: US Department of Energy
Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a thin AlAs interlayer
AL Demirel, S Strite, A Agarwal, MS Ünlü, DSL Mui, A Rockett, H Morkoç
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth …, 2020
委任: US National Science Foundation, US Department of Energy, US Department of …
一般公開: 24 件
Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs
T Liu, S Zhu, MH White, A Salemi, D Sheridan, AK Agarwal
IEEE Journal of the Electron Devices Society 9, 633-639, 2021
委任: US Department of Energy
Investigation of gate leakage current behavior for commercial 1.2 kV 4H-SiC power MOSFETs
S Zhu, T Liu, MH White, AK Agarwal, A Salemi, D Sheridan
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
委任: US Department of Energy
Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology
SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
委任: US Department of Energy, US Department of Defense
Body diode reliability of commercial SiC power MOSFETs
M Kang, S Yu, D Xing, T Liu, A Salemi, K Booth, S Zhu, MH White, ...
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
委任: US Department of Energy
Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs
T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020
委任: US Department of Energy
Gate leakage current and time-dependent dielectric breakdown measurements of commercial 1.2 kV 4H-SiC power MOSFETs
T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ...
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
委任: US Department of Energy
Wide band gap semiconductor technology for energy efficiency
A Agarwal, WJ Sung, L Marlino, P Gradzki, J Muth, R Ivester, N Justice
Materials Science Forum 858, 797-802, 2016
委任: US Department of Energy
Non-isothermal simulations to optimize SiC MOSFETs for enhanced short-circuit ruggedness
D Kim, AJ Morgan, N Yun, W Sung, A Agarwal, R Kaplar
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
委任: US Department of Energy
Bias-induced threshold voltage instability and interface trap density extraction of 4H-SiC MOSFETs
S Yu, M Kang, T Liu, D Xing, A Salemi, MH White, AK Agarwal
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
委任: US Department of Energy
Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications
SB Isukapati, AJ Morgan, W Sung, H Zhang, T Liu, A Fayed, AK Agarwal, ...
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
委任: US Department of Energy, US Department of Defense
1200-V SiC MOSFET short-circuit ruggedness evaluation and methods to improve withstand time
D Xing, B Hu, M Kang, Y Zhang, S Nayak, J Wang, AK Agarwal
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2022
委任: US Department of Energy
Threshold voltage instability of commercial 1.2 kV SiC power MOSFETs
S Yu, T Liu, S Zhu, D Xing, A Salemi, M Kang, K Booth, MH White, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020
委任: US Department of Energy
Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures
SA Mancini, SY Jang, Z Chen, D Kim, J Lynch, Y Liu, B Raghothamachar, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P62-1-P62-6, 2022
委任: US Department of Energy
Wide Bandgap power devices and applications; the US initiative
A Agarwal, L Marlino, R Ivester, M Johnson
2016 46th European Solid-State Device Research Conference (ESSDERC), 206-209, 2016
委任: US Department of Energy
Defects in 4H-SiC epilayers affecting device yield and reliability
R Stahlbush, N Mahadik, P Bonanno, J Soto, B Odekirk, W Sung, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P65-1-P65-6, 2022
委任: US Department of Defense
Spice modeling and circuit demonstration of a sic power ic technology
T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ...
IEEE Journal of the Electron Devices Society 10, 129-138, 2022
委任: US Department of Energy
3.3-kV SiC MOSFET performance and short-circuit capability
D Xing, C Xie, K Wang, T Liu, B Hu, J Wang, A Agarwal, R Singh, S Atcitty
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020
委任: US Department of Energy
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