| Status and prospects for SiC power MOSFETs JA Cooper, MR Melloch, R Singh, A Agarwal, JW Palmour IEEE Transactions on Electron Devices 49 (4), 658-664, 2002 | 581 | 2002 |
| Advances in silicon carbide processing and applications SE Saddow, AK Agarwal Artech House, 2004 | 502 | 2004 |
| SiC power-switching devices-the second electronics revolution? JA Cooper, A Agarwal Proceedings of the IEEE 90 (6), 956-968, 2002 | 451 | 2002 |
| Characterization, modeling, and application of 10-kV SiC MOSFET J Wang, T Zhao, J Li, AQ Huang, R Callanan, F Husna, A Agarwal IEEE Transactions on Electron Devices 55 (8), 1798-1806, 2008 | 439 | 2008 |
| A new degradation mechanism in high-voltage SiC power MOSFETs A Agarwal, H Fatima, S Haney, SH Ryu IEEE Electron Device Letters 28 (7), 587-589, 2007 | 323 | 2007 |
| Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy G Martin, S Strite, A Botchkarev, A Agarwal, A Rockett, H Morkoc, ... Applied physics letters 65 (5), 610-612, 1994 | 289 | 1994 |
| Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors AK Agarwal, S Seshadri, LB Rowland IEEE Electron Device Letters 18 (12), 592-594, 1997 | 283 | 1997 |
| GaN grown on hydrogen plasma cleaned 6H‐SiC substrates ME Lin, S Strite, A Agarwal, A Salvador, GL Zhou, N Teraguchi, A Rockett, ... Applied physics letters 62 (7), 702-704, 1993 | 243 | 1993 |
| 1800 V NPN bipolar junction transistors in 4H-SiC SH Ryu, AK Agarwal, R Singh, JW Palmour IEEE Electron Device Letters 22 (3), 124-126, 2001 | 235 | 2001 |
| Interface trap profile near the band edges at the interface NS Saks, SS Mani, AK Agarwal Applied Physics Letters 76 (16), 2250-2252, 2000 | 221 | 2000 |
| 10-kV, 123-m/spl Omega//spl middot/cm24H-SiC power DMOSFETs SH Ryu, S Krishnaswami, M O'Loughlin, J Richmond, A Agarwal, ... IEEE Electron Device Letters 25 (8), 556-558, 2004 | 211 | 2004 |
| Comparisons of SiC MOSFET and Si IGBT based motor drive systems T Zhao, J Wang, AQ Huang, A Agarwal 2007 IEEE Industry Applications Annual Meeting, 331-335, 2007 | 209 | 2007 |
| SiC power devices for microgrids Q Zhang, R Callanan, MK Das, SH Ryu, AK Agarwal, JW Palmour IEEE Transactions on Power Electronics 25 (12), 2889-2896, 2010 | 204 | 2010 |
| Hall mobility and free electron density at the interface in 4H–SiC NS Saks, AK Agarwal Applied Physics Letters 77 (20), 3281-3283, 2000 | 176 | 2000 |
| 1.1 kv 4h-sic power umosfets AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt IEEE Electron Device Letters 18 (12), 586-588, 1997 | 174 | 1997 |
| Thermal desorption of ultraviolet–ozone oxidized Ge (001) for substrate cleaning XJ Zhang, G Xue, A Agarwal, R Tsu, MA Hasan, JE Greene, A Rockett Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (5 …, 1993 | 174 | 1993 |
| 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation D Grider, M Das, A Agarwal, J Palmour, S Leslie, J Ostop, R Raju, ... 2011 IEEE Electric Ship Technologies Symposium, 131-134, 2011 | 163 | 2011 |
| Non-volatile random access memory cell constructed of silicon carbide AK Agarwal, RR Siergiej, CD Brandt, MH White US Patent 5,510,630, 1996 | 152 | 1996 |
| X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN WRL Lambrecht, B Segall, S Strite, G Martin, A Agarwal, H Morkoc, ... Physical Review B 50 (19), 14155, 1994 | 149 | 1994 |
| Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung Journal of Applied Physics 108 (5), 2010 | 141 | 2010 |