| Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ... Nature Physics 4 (8), 656-661, 2008 | 454 | 2008 |
| Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007 | 299 | 2007 |
| Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 251 | 2015 |
| Electrically Tunable Bandgaps in Bilayer MoS2 T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen Nano letters 15 (12), 8000-8007, 2015 | 226 | 2015 |
| Silicon quantum processor with robust long-distance qubit couplings G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg, R Rahman, G Klimeck, ... Nature communications 8 (1), 450, 2017 | 217 | 2017 |
| Electrically controlling single-spin qubits in a continuous microwave field A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ... Science advances 1 (3), e1500022, 2015 | 190 | 2015 |
| Spin blockade and exchange in Coulomb-confined silicon double quantum dots B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ... Nature nanotechnology 9 (6), 430-435, 2014 | 172 | 2014 |
| Spin readout and addressability of phosphorus-donor clusters in silicon H Büch, S Mahapatra, R Rahman, A Morello, MY Simmons Nature communications 4 (1), 2017, 2013 | 168 | 2013 |
| High precision quantum control of single donor spins in silicon R Rahman, CJ Wellard, FR Bradbury, M Prada, JH Cole, G Klimeck, ... Physical review letters 99 (3), 036403, 2007 | 161 | 2007 |
| Spatially resolving valley quantum interference of a donor in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature materials 13 (6), 605-610, 2014 | 124 | 2014 |
| Few-layer phosphorene: An ideal 2D material for tunnel transistors TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman Scientific reports 6 (1), 28515, 2016 | 122 | 2016 |
| Quantum simulation of the Hubbard model with dopant atoms in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature communications 7 (1), 11342, 2016 | 121 | 2016 |
| Aharonov–Bohm interference of fractional quantum Hall edge modes J Nakamura, S Fallahi, H Sahasrabudhe, R Rahman, S Liang, ... Nature Physics 15 (6), 563-569, 2019 | 117 | 2019 |
| Dielectric engineered tunnel field-effect transistor H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman IEEE Electron Device Letters 36 (10), 1097-1100, 2015 | 110 | 2015 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 107 | 2015 |
| Complementary black phosphorus tunneling field-effect transistors P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ... ACS nano 13 (1), 377-385, 2018 | 101 | 2018 |
| Orbital Stark effect and quantum confinement transition of donors in silicon R Rahman, GP Lansbergen, SH Park, J Verduijn, G Klimeck, S Rogge, ... Physical Review B—Condensed Matter and Materials Physics 80 (16), 165314, 2009 | 101 | 2009 |
| Atomically engineered electron spin lifetimes of 30 s in silicon TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ... Science advances 3 (3), e1602811, 2017 | 96 | 2017 |
| Saving Moore’s law down to 1 nm channels with anisotropic effective mass H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman Scientific reports 6 (1), 31501, 2016 | 95 | 2016 |
| Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ... ACS nano 11 (3), 2785-2793, 2017 | 91 | 2017 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue University確認したメール アドレス: purdue.edu
