| Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application YC Yang, F Pan, Q Liu, M Liu, F Zeng Nano letters 9 (4), 1636-1643, 2009 | 998 | 2009 |
| Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou Nature Nanotechnology 15 (7), 545-557, 2020 | 765 | 2020 |
| Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu Advanced Materials 24 (14), 1844, 2012 | 726 | 2012 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu ACS nano 4 (10), 6162-6168, 2010 | 486 | 2010 |
| Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu Advanced Functional Materials 28 (1), 1705320, 2018 | 450 | 2018 |
| Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ... Nanotechnology 21 (4), 045202, 2009 | 381 | 2009 |
| Resistive switching memory effect of ZrO2 films with Zr+ implanted Q Liu, W Guan, S Long, R Jia, M Liu, J Chen Applied physics letters 92 (1), 2008 | 350 | 2008 |
| An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ... Nature communications 11 (1), 51, 2020 | 346 | 2020 |
| Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu Advanced Functional Materials 24 (36), 5679-5686, 2014 | 344 | 2014 |
| Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ... Small 15 (24), 1901423, 2019 | 339 | 2019 |
| Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2 nanosheets for organic pollutants degradation under visible LED light irradiation K Dai, L Lu, C Liang, Q Liu, G Zhu Applied Catalysis B: Environmental 156, 331-340, 2014 | 339 | 2014 |
| An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ... IEEE Electron Device Letters 39 (2), 308-311, 2017 | 337 | 2017 |
| Nonpolar Nonvolatile Resistive Switching in Cu Doped W Guan, S Long, Q Liu, M Liu, W Wang IEEE Electron Device Letters 29 (5), 434-437, 2008 | 322 | 2008 |
| Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ... Advanced materials 31 (7), 1805284, 2019 | 286 | 2019 |
| Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou Advanced Functional Materials 28 (40), 1803728, 2018 | 266 | 2018 |
| Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu IEEE Electron Device Letters 30 (12), 1335-1337, 2009 | 265 | 2009 |
| On the resistive switching mechanisms of Cu/ZrO2: Cu/Pt W Guan, M Liu, S Long, Q Liu, W Wang Applied Physics Letters 93 (22), 2008 | 237 | 2008 |
| Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu Adv. Mater 28 (48), 10623-10629, 2016 | 236 | 2016 |
| Breaking the current‐retention dilemma in cation‐based resistive switching devices utilizing graphene with controlled defects X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ... Advanced materials 30 (14), 1705193, 2018 | 229 | 2018 |
Hangbing LvInstitute of Microelectronics, Chinese Academy of Sciences確認したメール アドレス: ime.ac.cn