| Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014 | 797 | 2014 |
| Field-Effect Transistors With Graphene/Metal Heterocontacts Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide IEEE electron device letters 35 (5), 599-601, 2014 | 177 | 2014 |
| Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 152 | 2015 |
| SOFM-MLP: a hybrid neural network for atmospheric temperature prediction NR Pal, S Pal, J Das, K Majumdar IEEE Transactions on Geoscience and Remote Sensing 41 (12), 2783-2791, 2003 | 93 | 2003 |
| High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 88 | 2014 |
| Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance D Somvanshi, S Kallatt, C Venkatesh, S Nair, G Gupta, JK Anthony, ... Physical Review B 96, 205423, 2017 | 85 | 2017 |
| Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio K Murali, M Dandu, S Das, K Majumdar ACS applied materials & interfaces 10 (6), 5657-5664, 2018 | 72 | 2018 |
| Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit K Majumdar, C Hobbs, PD Kirsch IEEE Electron Device Letters 35 (3), 402-404, 2014 | 65 | 2014 |
| Revisiting the theory of ferroelectric negative capacitance K Majumdar, S Datta, SP Rao IEEE Transactions on Electron Devices 63 (5), 2043-2049, 2016 | 55 | 2016 |
| Direct observation of giant binding energy modulation of exciton complexes in monolayer G Gupta, S Kallatt, K Majumdar Physical Review B 96 (8), 081403, 2017 | 53 | 2017 |
| Photoresponse of atomically thin MoS 2 layers and their planar heterojunctions S Kallatt, G Umesh, N Bhat, K Majumdar Nanoscale 8 (33), 15213-15222, 2016 | 44 | 2016 |
| Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts K Murali, M Dandu, K Watanabe, T Taniguchi, K Majumdar Advanced Functional Materials 31 (18), 2010513, 2021 | 37 | 2021 |
| Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ... 2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012 | 37 | 2012 |
| Layer degree of freedom for excitons in transition metal dichalcogenides S Das, G Gupta, K Majumdar Physical Review B 99 (16), 165411, 2019 | 35 | 2019 |
| Mobile user tracking using a hybrid neural network K Majumdar, N Das Wireless networks 11, 275-284, 2005 | 35 | 2005 |
| Highly Sensitive, Fast Graphene Photodetector with Responsivity >106 A/W Using a Floating Quantum Well Gate K Murali, N Abraham, S Das, S Kallatt, K Majumdar ACS applied materials & interfaces 11 (33), 30010-30018, 2019 | 33 | 2019 |
| Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction K Murali, K Majumdar IEEE Transactions on Electron Devices 65 (10), 4141-4148, 2018 | 31 | 2018 |
| Gate-and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T-Junction M Mahajan, K Majumdar ACS nano 14 (6), 6803-6811, 2020 | 30 | 2020 |
| Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides G Gupta, K Majumdar Physical Review B 99 (8), 085412, 2019 | 28 | 2019 |
| Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity S Kallatt, S Nair, K Majumdar Small 14 (3), 1702066, 2018 | 28 | 2018 |