| Hot-carrier luminescence in Si J Bude, N Sano, A Yoshii Physical Review B 45 (11), 5848, 1992 | 310 | 1992 |
| Thickness dependence of the effective dielectric constant in a thin film capacitor K Natori, D Otani, N Sano Applied physics letters 73 (5), 632-634, 1998 | 221 | 1998 |
| Impact-ionization theory consistent with a realistic band structure of silicon N Sano, A Yoshii Physical Review B 45 (8), 4171, 1992 | 178 | 1992 |
| Impact ionization coefficients of 4H silicon carbide T Hatakeyama, T Watanabe, T Shinohe, K Kojima, K Arai, N Sano Applied physics letters 85 (8), 1380-1382, 2004 | 176 | 2004 |
| An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii IEEE Transactions on Electron Devices 45 (12), 2390-2399, 1998 | 152 | 1998 |
| On discrete random dopant modeling in drift-diffusion simulations: physical meaning ofatomistic'dopants N Sano, K Matsuzawa, M Mukai, N Nakayama Microelectronics Reliability 42 (2), 189-199, 2002 | 137 | 2002 |
| Structure of carbon onions and nanotubes formed by arc in liquids I Alexandrou, H Wang, N Sano, GAJ Amaratunga The Journal of chemical physics 120 (2), 1055-1058, 2004 | 119 | 2004 |
| Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model MV Fischetti, S Jin, TW Tang, P Asbeck, Y Taur, SE Laux, M Rodwell, ... Journal of computational electronics 8, 60-77, 2009 | 99 | 2009 |
| Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1/spl mu/m Si-MOSFETs N Sano, K Matsuzawa, M Mukai, N Nakayama International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 95 | 2000 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 90 | 1994 |
| Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy O Takeuchi, M Aoyama, R Oshima, Y Okada, H Oigawa, N Sano, ... Applied physics letters 85 (15), 3268-3270, 2004 | 80 | 2004 |
| Electron transport and impact ionization in Si N Sano, T Aoki, M Tomizawa, A Yoshii Physical Review B 41 (17), 12122, 1990 | 72 | 1990 |
| Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics K Yoshida, Y Okada, N Sano Applied physics letters 97 (13), 2010 | 71 | 2010 |
| Temperature dependence of hot carrier effects in short-channel Si-MOSFETs N Sano, M Tomizawa, A Yoshii IEEE Transactions on Electron Devices 42 (12), 2211-2216, 1995 | 68 | 1995 |
| Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs MV Fischetti, N Sano, SE Laux, K Natori Journal of Technology Computer Aided Design TCAD, 1-50, 1996 | 61 | 1996 |
| Device modeling and simulations toward sub-10 nm semiconductor devices N Sano, A Hiroki, K Matsuzawa IEEE transactions on Nanotechnology 1 (1), 63-71, 2002 | 59 | 2002 |
| Scaling limit of digital circuits due to thermal noise K Natori, N Sano Journal of applied physics 83 (10), 5019-5024, 1998 | 59 | 1998 |
| Impact‐ionization model consistent with the band structure of semiconductors N Sano, A Yoshii Journal of applied physics 77 (5), 2020-2025, 1995 | 56 | 1995 |
| Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors N Sano, M Tomizawa Applied physics letters 79 (14), 2267-2269, 2001 | 53 | 2001 |
| Impact ionization rate near thresholds in Si N Sano, A Yoshii Journal of applied physics 75 (10), 5102-5105, 1994 | 51 | 1994 |
Massimo V FischettiThe University of Texas at Dallas確認したメール アドレス: utdallas.edu
