| InGaN/GaN multiple quantum well solar cells with long operating wavelengths R Dahal, B Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 94 (6), 2009 | 466 | 2009 |
| InGaN/GaN multiple quantum well concentrator solar cells R Dahal, J Li, K Aryal, JY Lin, HX Jiang Applied Physics Letters 97 (7), 2010 | 258 | 2010 |
| 200nm deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 89 (21), 2006 | 245 | 2006 |
| Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied physics letters 98 (21), 2011 | 235 | 2011 |
| Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang Applied physics letters 101 (17), 2012 | 171 | 2012 |
| Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied Physics Letters 90 (24), 2007 | 166 | 2007 |
| Thermoelectric properties of InxGa1− xN alloys BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke Applied Physics Letters 92 (4), 2008 | 158 | 2008 |
| Epitaxial growth and demonstration of hexagonal BN/AlGaN pn junctions for deep ultraviolet photonics S Majety, J Li, XK Cao, R Dahal, BN Pantha, JY Lin, HX Jiang Applied Physics Letters 100 (6), 2012 | 138 | 2012 |
| Hexagonal boron nitride epitaxial layers as neutron detector materials J Li, R Dahal, S Majety, JY Lin, HX Jiang Nuclear instruments and methods in physics research section a: accelerators …, 2011 | 131 | 2011 |
| Recent developments of wide-bandgap semiconductor based UV sensors A Benmoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ... Diamond and Related Materials 18 (5-8), 860-864, 2009 | 118 | 2009 |
| Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection K Ahmed, R Dahal, A Weltz, JQ Lu, Y Danon, IB Bhat Applied physics letters 109 (11), 2016 | 85 | 2016 |
| Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: photoemission assessments A BenMoussa, JF Hochedez, R Dahal, J Li, JY Lin, HX Jiang, A Soltani, ... Applied Physics Letters 92 (2), 2008 | 68 | 2008 |
| Band-edge transitions in hexagonal boron nitride epilayers S Majety, XK Cao, J Li, R Dahal, JY Lin, HX Jiang Applied physics letters 101 (5), 2012 | 64 | 2012 |
| Erbium-doped GaN optical amplifiers operating at 1.54 μm R Dahal, C Ugolini, JY Lin, HX Jiang, JM Zavada Applied Physics Letters 95 (11), 2009 | 64 | 2009 |
| Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors R Dahal, TM Al Tahtamouni, ZY Fan, JY Lin, HX Jiang Applied physics letters 90 (26), 2007 | 64 | 2007 |
| Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat Applied Physics Letters 100 (24), 2012 | 61 | 2012 |
| 1.54 μm emitters based on erbium doped InGaN pin junctions R Dahal, C Ugolini, JY Lin, HX Jiang, JM Zavada Applied Physics Letters 97 (14), 2010 | 56 | 2010 |
| Solid-state neutron detectors based on thickness scalable hexagonal boron nitride K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat Applied Physics Letters 110 (2), 2017 | 55 | 2017 |
| High quality AlN for deep UV photodetectors S Nikishin, B Borisov, M Pandikunta, R Dahal, JY Lin, HX Jiang, H Harris, ... Applied Physics Letters 95 (5), 2009 | 54 | 2009 |
| AlN avalanche photodetectors R Dahal, TM Al Tahtamouni, JY Lin, HX Jiang Applied Physics Letters 91 (24), 2007 | 52 | 2007 |
Hongxing Jiang (江红星）Ed Whitacre Endowed Chair and P. W. Horn Distinguished Professor of ECE, Texas Tech University確認したメール アドレス: ttu.edu