Giuseppe Carlo Tettamanzi

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Sven RoggeProfessor of Physics, University of New South Wales確認したメールアドレス: unsw.edu.au
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue University確認したメールアドレス: purdue.edu
Andrew DzurakScientia Professor in Electrical Engineering, UNSW確認したメールアドレス: unsw.edu.au
Maud VinetQuobly (ex CEA)確認したメールアドレス: quobly.io
Rajib RahmanProfessor of Physics, University of New South Wales確認したメールアドレス: unsw.edu.au
Ruichen ZhaoIBM Quantum確認したメールアドレス: ibm.com
Mikko MöttönenFull Professor of Quantum Technology, Aalto University and VTT確認したメールアドレス: aalto.fi
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano Bicocca確認したメールアドレス: unimib.it
David A. MahnsWestern Sydney University確認したメールアドレス: westernsydney.edu.au
Antonio LautoAssociate Professor, University of Western Sydney確認したメールアドレス: uws.edu.au
María José CalderónInstituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas確認したメールアドレス: icmm.csic.es
Damia MawadSchool of Materials Science and Engineering, University of New South Wales確認したメールアドレス: unsw.edu.au
Paul BreenBiomedical Engineering & Neuroscience, The MARCS Institute, Western Sydney Unviersity確認したメールアドレス: uws.edu.au
Gaetano Gargiulo, Gaetano D. GargiuloResearch Professor, Western Sydney University, "Federico II" The University of確認したメールアドレス: westernsydney.edu.au
Marcus StoodleyMacquarie University確認したメールアドレス: mq.edu.au
Ramon Aguado (ORCID: 0000-0002-7...Senior Researcher, Instituto de Ciencia de Materiales de Madrid (ICMM - CSIC). (ROR 02qqy8j09)確認したメールアドレス: icmm.csic.es
Belita KoillerInstituto de Física, Universidade Federal do Rio de Janeiro確認したメールアドレス: if.ufrj.br
Timothy DutyD-Wave Quantum Inc.確認したメールアドレス: dwavesys.com
Vyacheslavs KashcheyevsUniversity of Latvia確認したメールアドレス: latnet.lv
Janis TimoshenkoFritz-Haber Institute確認したメールアドレス: fhi-berlin.mpg.de

フォロー

Giuseppe Carlo Tettamanzi

giuseppe.tettamanzi@adelaide.edu.au

確認したメールアドレス: adelaide.edu.au

Solid State Physics Quantum Transport Mesoscopic Physics Nano-electronics


タイトル引用回数順公開年順タイトル順	引用先引用先	年
An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ... Nano letters 14 (6), 3405-3411, 2014	92	2014
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012	88	2012
Magnetic-field probing of an SU (4) Kondo resonance in a single-atom transistor GC Tettamanzi, J Verduijn, GP Lansbergen, M Blaauboer, MJ Calderón, ... Physical review letters 108 (4), 046803, 2012	70	2012
Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014	56	2014
Tunable Kondo effect in a single donor atom GP Lansbergen, GC Tettamanzi, J Verduijn, N Collaert, S Biesemans, ... Nano letters 10 (2), 455-460, 2010	55	2010
Charge pumping through a single donor atom GC Tettamanzi, R Wacquez, S Rogge New Journal of Physics 16 (6), 063036, 2014	54	2014
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon R Rahman, GP Lansbergen, J Verduijn, GC Tettamanzi, SH Park, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115428, 2011	46	2011
Wave function control over a single donor atom J Verduijn, GC Tettamanzi, S Rogge Nano Letters 13 (4), 1476-1480, 2013	44	2013
Heterointerface effects on the charging energy of the shallow ground state in silicon: Role of dielectric mismatch MJ Calderón, J Verduijn, GP Lansbergen, GC Tettamanzi, S Rogge, ... Physical Review B—Condensed Matter and Materials Physics 82 (7), 075317, 2010	43	2010
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ... Applied Physics Letters 96 (26), 2010	39	2010
Lifetime-enhanced transport in silicon due to spin and valley blockade GP Lansbergen, R Rahman, J Verduijn, GC Tettamanzi, N Collaert, ... Physical Review Letters 107 (13), 136602, 2011	37	2011
Superconducting transition in Nb nanowires fabricated using focused ion beam GC Tettamanzi, CI Pakes, A Potenza, S Rubanov, CH Marrows, S Prawer Nanotechnology 20 (46), 465302, 2009	31	2009
Probing the quantum states of a single atom transistor at microwave frequencies GC Tettamanzi, SJ Hile, MG House, M Fuechsle, S Rogge, MY Simmons ACS nano 11 (3), 2444-2451, 2017	29	2017
Stimulation and repair of peripheral nerves using bioadhesive graft‐antenna A Sliow, Z Ma, G Gargiulo, D Mahns, D Mawad, P Breen, M Stoodley, ... Advanced Science 6 (11), 1801212, 2019	28	2019
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ... 2010 Symposium on VLSI Technology, 193-194, 2010	27	2010
Thermionic emission as a tool to study transport in undoped nFinFETs GC Tettamanzi, A Paul, GP Lansbergen, J Verduijn, S Lee, N Collaert, ... IEEE electron device letters 31 (2), 150-152, 2009	19	2009
Gigahertz single-electron pumping mediated by parasitic states A Rossi, J Klochan, J Timoshenko, FE Hudson, M Möttönen, S Rogge, ... Nano letters 18 (7), 4141-4147, 2018	14	2018
Interface trap density metrology of state-of-the-art undoped Si n-FinFETs GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ... IEEE Electron Device Letters 32 (4), 440-442, 2011	14	2011
Coherent transport through a double donor system in silicon J Verduijn, GC Tettamanzi, GP Lansbergen, N Collaert, S Biesemans, ... Applied Physics Letters 96 (7), 2010	14	2010
A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures WE Purches, A Rossi, R Zhao, S Kafanov, TL Duty, AS Dzurak, S Rogge, ... Applied Physics Letters 107 (6), 2015	12	2015

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