Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs I Hwang, J Kim, S Chong, HS Choi, SK Hwang, J Oh, JK Shin, UI Chung IEEE electron device letters 34 (12), 1494-1496, 2013 | 119 | 2013 |
Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays MJ Lee, D Lee, H Kim, HS Choi, JB Park, HG Kim, YK Cha, UI Chung, ... 2012 International Electron Devices Meeting, 2.6. 1-2.6. 3, 2012 | 92 | 2012 |
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With and Gate Dielectrics by Low-Frequency Noise Measurements HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung IEEE electron device letters 32 (8), 1083-1085, 2011 | 56 | 2011 |
An adaptive predistortion RF power amplifier with a spectrum monitor for multicarrier WCDMA applications SY Lee, YS Lee, SH Hong, HS Choi, YH Jeong IEEE transactions on microwave theory and techniques 53 (2), 786-793, 2005 | 51 | 2005 |
The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung Applied Physics Letters 100 (17), 2012 | 44 | 2012 |
Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung Applied Physics Letters 99 (18), 2011 | 36 | 2011 |
Power management chips and power management devices including the same HJ Kim, JK Shin, UI Chung, H Choi US Patent 9,525,410, 2016 | 34 | 2016 |
High threshold voltage p-GaN gate power devices on 200 mm Si J Kim, SK Hwang, I Hwang, H Choi, S Chong, HS Choi, W Jeon, HS Choi, ... 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 33 | 2013 |
Characterization and Modeling of 1/ Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides RH Baek, CK Baek, HS Choi, JS Lee, YY Yeoh, KH Yeo, DW Kim, K Kim, ... IEEE transactions on nanotechnology 10 (3), 417-423, 2010 | 29 | 2010 |
Three-dimensional integration approach to high-density memory devices H Kim, S Jeon, MJ Lee, J Park, S Kang, HS Choi, C Park, HS Hwang, ... IEEE transactions on electron devices 58 (11), 3820-3828, 2011 | 26 | 2011 |
Independently controllable 3/sup rd/-and 5/sup th/-order analog predistortion linearizer for RF power amplifier in GSM SY Lee, YS Lee, SH Hong, HS Choi, YH Jeong Proceedings of 2004 IEEE Asia-Pacific Conference on Advanced System …, 2004 | 25 | 2004 |
High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices S Jeon, H Kim, H Choi, I Song, SE Ahn, CJ Kim, J Shin, UI Chung, I Yoo, ... 2012 Symposium on VLSI Technology (VLSIT), 125-126, 2012 | 24 | 2012 |
Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors HS Choi, S Jeon Applied Physics Letters 104 (13), 2014 | 21 | 2014 |
Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager S Jeon, SE Ahn, I Song, Y Jeon, Y Kim, S Kim, H Choi, H Kim, E Lee, ... 2011 International Electron Devices Meeting, 14.3. 1-14.3. 4, 2011 | 19 | 2011 |
Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors HS Choi, S Jeon Applied Physics Letters 106 (1), 2015 | 17 | 2015 |
Semiconductor device and method of sensing data of the semiconductor device HJ Kim, JK Shin, H Choi, H Jeong US Patent 8,503,220, 2013 | 17 | 2013 |
Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination HS Choi, S Jeon Applied Physics Letters 104 (2), 2014 | 15 | 2014 |
Resistor devices and digital-to-analog converters using the same H Choi, HJ Kim, H Jeong US Patent 8,477,055, 2013 | 15 | 2013 |
The impact of La-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions CY Kang, CD Young, J Huang, P Kirsch, D Heh, P Sivasubramani, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 13 | 2008 |
Mobility Degradation Effect to Hooge's Constant in Recessed-Gate MIS Power Transistors HS Choi IEEE Electron Device Letters 35 (6), 624-626, 2014 | 12 | 2014 |