| High electron mobility of epitaxial ZnO thin films on -plane sapphire grown by multistep pulsed-laser deposition EM Kaidashev, M Lorenz, H Von Wenckstern, A Rahm, HC Semmelhack, ... Applied Physics Letters 82 (22), 3901-3903, 2003 | 799 | 2003 |
| Cuprous iodide–ap‐type transparent semiconductor: History and novel applications M Grundmann, FL Schein, M Lorenz, T Böntgen, J Lenzner, ... physica status solidi (a) 210 (9), 1671-1703, 2013 | 352 | 2013 |
| Group‐III sesquioxides: growth, physical properties and devices H Von Wenckstern Advanced Electronic Materials 3 (9), 1600350, 2017 | 232 | 2017 |
| Mean barrier height of Pd Schottky contacts on ZnO thin films H von Wenckstern, G Biehne, RA Rahman, H Hochmuth, M Lorenz, ... Applied physics letters 88 (9), 2006 | 203 | 2006 |
| Optical and electrical properties of epitaxial (Mg, Cd) xZn1− xO, ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed laser deposition M Lorenz, EM Kaidashev, H Von Wenckstern, V Riede, C Bundesmann, ... Solid-State Electronics 47 (12), 2205-2209, 2003 | 197 | 2003 |
| Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ... Advanced Materials 22 (47), 5332-5349, 2010 | 188 | 2010 |
| Transparent semiconducting oxides: Materials and devices M Grundmann, H Frenzel, A Lajn, M Lorenz, F Schein, H Von Wenckstern Physica status solidi (a) 207 (6), 1437-1449, 2010 | 184 | 2010 |
| Transparent p-CuI/n-ZnO heterojunction diodes FL Schein, H von Wenckstern, M Grundmann Applied Physics Letters 102 (9), 2013 | 178 | 2013 |
| Defects in virgin and -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy G Brauer, W Anwand, W Skorupa, J Kuriplach, O Melikhova, C Moisson, ... Physical Review B—Condensed Matter and Materials Physics 74 (4), 045208, 2006 | 168 | 2006 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018 | 159 | 2018 |
| Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition BQ Cao, M Lorenz, A Rahm, H Von Wenckstern, C Czekalla, J Lenzner, ... Nanotechnology 18 (45), 455707, 2007 | 146 | 2007 |
| Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ... Applied physics express 8 (1), 011101, 2014 | 144 | 2014 |
| Lateral homogeneity of Schottky contacts on -type ZnO H Von Wenckstern, EM Kaidashev, M Lorenz, H Hochmuth, G Biehne, ... Applied physics letters 84 (1), 79-81, 2004 | 139 | 2004 |
| Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition D Splith, S Müller, F Schmidt, H Von Wenckstern, JJ van Rensburg, ... physica status solidi (a) 211 (1), 40-47, 2014 | 130 | 2014 |
| Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, T Schultz, ... APL Materials 7 (2), 2019 | 129 | 2019 |
| Anionic and cationic substitution in ZnO H Von Wenckstern, H Schmidt, M Brandt, A Lajn, R Pickenhain, M Lorenz, ... Progress in Solid State Chemistry 37 (2-3), 153-172, 2009 | 121 | 2009 |
| Control of the conductivity of Si‐doped β‐Ga2O3 thin films via growth temperature and pressure S Müller, H von Wenckstern, D Splith, F Schmidt, M Grundmann physica status solidi (a) 211 (1), 34-39, 2014 | 116 | 2014 |
| ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates H Frenzel, A Lajn, M Brandt, H Wenckstern, G Biehne, H Hochmuth, ... Applied Physics Letters 92 (19), 2008 | 111 | 2008 |
| Oxide bipolar electronics: materials, devices and circuits M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ... Journal of Physics D: Applied Physics 49 (21), 213001, 2016 | 103 | 2016 |
| Lattice parameters and Raman-active phonon modes of β-(AlxGa1− x) 2O3 C Kranert, M Jenderka, J Lenzner, M Lorenz, H Von Wenckstern, ... Journal of Applied Physics 117 (12), 2015 | 98 | 2015 |
Marius GrundmannUniversität Leipzig確認したメール アドレス: physik.uni-leipzig.de