| Contact structure of semiconductor device SL Wang, S Ding-Kang, CH Lin, SP Sun, CH Wann US Patent 9,105,490, 2015 | 1266 | 2015 |
| Contact structure of semiconductor device SL Wang, S Ding-Kang, CH Lin, SP Sun, CH Wann US Patent 8,823,065, 2014 | 1130 | 2014 |
| Wrap-around contact SL Wang, NK Chen, S Ding-Kang, MC Chang, YA Lin, GC Huang, CF Hsu, ... US Patent 9,443,769, 2016 | 476 | 2016 |
| Characterizations of amorphous IGZO thin-film transistors with low subthreshold swing LY Su, HY Lin, HK Lin, SL Wang, LH Peng, JJ Huang IEEE Electron Device Letters 32 (9), 1245-1247, 2011 | 115 | 2011 |
| Semiconductor device and manufacturing method thereof YC Yeo, HL Chiang, JC Sheu, SL Wang, IS Chen, CO Chui US Patent 10,164,042, 2018 | 94* | 2018 |
| FinFET low resistivity contact formation method SL Wang, S Ding-Kang, CH Ko US Patent 9,287,138, 2016 | 51 | 2016 |
| FinFET low resistivity contact formation method SL Wang, S Ding-Kang, CH Lin, SP Sun, CH Wann US Patent 10,269,628, 2019 | 32* | 2019 |
| Semiconductor devices, FinFET devices, and manufacturing methods thereof SL Wang, CS Chang, SP Sun US Patent 10,049,938, 2018 | 32 | 2018 |
| Interconnect structures and methods of forming the same S Wang, Y Okuno US Patent 10,867,905, 2020 | 30 | 2020 |
| Short channel effects on gallium nitride/gallium oxide nanowire transistors JW Yu, PC Yeh, SL Wang, YR Wu, MH Mao, HH Lin, LH Peng Applied Physics Letters 101 (18), 2012 | 27 | 2012 |
| Wrap-around contact plug and method manufacturing same SL Wang, JC Sheu, HY Huang, CW Chang, CO Chui US Patent 10,475,654, 2019 | 26 | 2019 |
| Single mode stimulated emission from prismlike gallium nitride submicron cavities CM Lai, HM Wu, PC Huang, SL Wang, LH Peng Applied physics letters 90 (14), 2007 | 25 | 2007 |
| High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures SL Wang, JW Yu, PC Yeh, HW Kuo, LH Peng, AA Fedyanin, ED Mishina, ... Applied Physics Letters 100 (6), 2012 | 23 | 2012 |
| Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure and manufacturing method thereof LEE Kai-Hsuan, J Sheu, S Wang, CY Yang, S Wang, SH Yeong US Patent 10,811,262, 2020 | 22 | 2020 |
| Semiconductor device and manufacturing method thereof S Wang, P Tsai, Y Okuno US Patent 10,714,475, 2020 | 19 | 2020 |
| Thin film transistor LH Peng, SL Wang, KUO Hong-Wei US Patent App. 12/609,337, 2011 | 19 | 2011 |
| Phase-change memory devices based on gallium-doped indium oxide SL Wang, CY Chen, MK Hsieh, WC Lee, AH Kung, LH Peng Applied physics letters 94 (11), 2009 | 17 | 2009 |
| Method of making a FinFET device SP Sun, SL Wang, CH Lin, NK Chen, CH Wann US Patent 9,034,716, 2015 | 15 | 2015 |
| Interconnect structures and methods of forming the same SL Wang, SS Liang, J Chang, CH Chu, KC Lin US Patent 11,011,413, 2021 | 13 | 2021 |
| Semiconductor structure with enhanced contact and method of manufacture the same Y Okuno, CL Chen, MC Chang, SL Wang, YF Pai, Y Oniki US Patent 9,647,115, 2017 | 13 | 2017 |
