| Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist W Henschel, YM Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 213 | 2003 |
| New generation electron beam resists: a review AS Gangnaik, YM Georgiev, JD Holmes Chemistry of Materials 29 (5), 1898-1917, 2017 | 184 | 2017 |
| Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer C Cummins, A Gangnaik, RA Kelly, D Borah, J O'Connell, N Petkov, ... Nanoscale 7 (15), 6712-6721, 2015 | 67 | 2015 |
| Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser T Kluge, M Rödel, J Metzkes-Ng, A Pelka, AL Garcia, I Prencipe, ... Physical Review X 8 (3), 031068, 2018 | 55 | 2018 |
| Organo-arsenic molecular layers on silicon for high-density doping J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ... ACS applied materials & interfaces 7 (28), 15514-15521, 2015 | 50 | 2015 |
| Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013 | 48 | 2013 |
| Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist YM Georgiev, W Henschel, A Fuchs, H Kurz Vacuum 77 (2), 117-123, 2005 | 44 | 2005 |
| Highly selective etch process for silicon-on-insulator nano-devices T Wahlbrink, T Mollenhauer, YM Georgiev, W Henschel, JK Efavi, ... Microelectronic Engineering 78, 212-217, 2005 | 42 | 2005 |
| Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes Microelectronic engineering 123, 126-130, 2014 | 36 | 2014 |
| A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 35 | 2018 |
| Interferometric in situ alignment for UV-based nanoimprint A Fuchs, B Vratzov, T Wahlbrink, Y Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 35 | 2004 |
| Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ... Sensors and Actuators B: Chemical 199, 291-300, 2014 | 31 | 2014 |
| Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers C Cummins, A Gangnaik, RA Kelly, AJ Hydes, J O’Connell, N Petkov, ... Chemistry of Materials 27 (17), 6091-6096, 2015 | 28 | 2015 |
| Supercritical drying process for high aspect-ratio HSQ nano-structures T Wahlbrink, D Küpper, YM Georgiev, J Bolten, M Möller, D Küpper, ... Microelectronic engineering 83 (4-9), 1124-1127, 2006 | 27 | 2006 |
| Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ... Journal of Materials Chemistry C 2 (43), 9248-9257, 2014 | 26 | 2014 |
| Junctionless nanowire transistor fabricated with high mobility Ge channel R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ... physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014 | 24 | 2014 |
| Novel germanium surface modification for sub-10 nm patterning with electron beam lithography and hydrogen silsesquioxane resist AS Gangnaik, YM Georgiev, G Collins, JD Holmes Journal of Vacuum Science & Technology B 34 (4), 2016 | 23 | 2016 |
| Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices YM Georgiev, N Petkov, B McCarthy, R Yu, V Djara, D O’Connell, O Lotty, ... Microelectronic engineering 118, 47-53, 2014 | 22 | 2014 |
| Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography RG Hobbs, M Schmidt, CT Bolger, YM Georgiev, P Fleming, MA Morris, ... Journal of Vacuum Science & Technology B 30 (4), 2012 | 22 | 2012 |
| Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires MB Khan, D Deb, J Kerbusch, F Fuchs, M Löffler, S Banerjee, U Mühle, ... Applied Sciences 9 (17), 3462, 2019 | 21 | 2019 |
Justin D. HolmesProfessor of Nanochemistry確認したメール アドレス: ucc.ie
